A modulus-engineered multi-layer polymer film with mechanical robustness for the application to highly deformable substrate platform in stretchable electronics

Kim, Youson; Kim, Junmo; Kim, Chan Young; Kim, Tae Hyun; Lee, Chungryeol; Jeong, Kihoon; Jo, Woosung; Yoo, Seunghyup; Kim, Taek‐Soo; Choi, Kyung Cheol; Im, Sung Gap

doi:10.1016/j.cej.2021.134074

Cited by 17 publications

(16 citation statements)

References 44 publications

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“…Stretchable electronics using oxide TFTs also have been steadily reported so far, and we surveyed these studies with emphasis on three main figure of merits, including field effect mobility, stretchability, and device density (Supplementary Table 1 ) 17 , 19 , 30 – 39 . Among the reports on stretchable oxide TFT arrays, Kim et al recently reported stretchable a-IGZO TFT with quite high mobility of 24.9 cm 2 V −1 s −1 , but it can be stretched only up to 30% and just four devices are placed on a substrate size of 25 × 25 mm 2 39 . Meanwhile, Münzenrieder et al reported highly stretchable a-IGZO TFT array which can be stretched up to 210%, however, the mobility is low as 11.3 cm 2 V −1 s −1 and device density is limited to 400 TFTs/cm 2 which is much lower than 42,000 TFTs/cm 2 of stretchable organic transistors 17 , 21 .…”

Section: Resultsmentioning

confidence: 99%

Section: Metal Oxide Tft With Superior Performance and Stabilitymentioning

confidence: 99%

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High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Park

et al. 2022

Nat Commun

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Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. However, they are unfavorable for building stretchable electronic products due to their brittle nature. Because of this drawback, they have mostly been placed on non-stretchable parts to avoid mechanical strain, burdening the deformable interconnects, which link these rigid parts, with the strain of the entire system. Integration density must therefore be sacrificed when stretchability is the first priority because the portion of stretchable wirings should be raised. In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embedding the devices into stretchable serpentine strings to defeat such trade-off. The embedded transistors do not hide from deformation and endure strain up to 100% by themselves; thus, integration density can be enhanced without sacrificing the stretchability. We expect that our approach can create more compact stretchable electronics with high-end functionality than before.

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Section: Resultsmentioning

confidence: 99%

Section: Metal Oxide Tft With Superior Performance and Stabilitymentioning

confidence: 99%

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Park

et al. 2022

Nat Commun

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“…So, the AgNWs and their network can be well protected from the external elongation to retain their electrical functionality. 28,30,34,35 These simulation results revealed that through tight contact between the AgNWs and PU, the stress endured by the AgNWs during the tensile process can be effectively relieved, improving the mechanical properties of the TSCs. The interactions between AgNWs, BACA, and PU were first characterized through various methodologies.…”

mentioning

confidence: 80%

“…The buffer layer could effectively isolate the stress from the elastomer substrate. So, the AgNWs and their network can be well protected from the external elongation to retain their electrical functionality. ,,, These simulation results revealed that through tight contact between the AgNWs and PU, the stress endured by the AgNWs during the tensile process can be effectively relieved, improving the mechanical properties of the TSCs.…”

mentioning

confidence: 82%

“…Nevertheless, because of the large difference in Young’s modulus the strong interface mismatch of stiff AgNWs and elastic substrates still generates a high degree of stress concentration at their interface (Figure ). , Thus, the loosely distributed AgNWs will fracture, slip, or delaminate from the soft substrate, significantly reducing its working range. , In addition, these above-mentioned errors (fracture, slipping, and delamination) can accumulate over repeated large structural deformation processes and affect the durability of the TSCs, impairing their long-term service performance in practical applications. , To improve the stretchability, durability, and stability of TSCs, it is essential to optimize the interfacial interaction between the AgNWs network and elastic substrate.…”

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confidence: 99%

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Tailoring Silver Nanowire Nanocomposite Interfaces to Achieve Superior Stretchability, Durability, and Stability in Transparent Conductors

Liu

Wei

et al. 2022

Nano Lett.

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Silver nanowires (AgNWs) have been considered as a promising candidate for transparent stretchable conductors (TSCs). However, the strong interface mismatch of stiff AgNWs and elastic substrates leads to the stress concentration at their interface and ultimately the low stretchability and poor durability of TSCs. Here, to address the interfacial mismatch of AgNWsbased TSCs we put forward a universal interface tailoring strategy that introduces the mercapto compound as the intermediate crosslinked layer. The mercapto compound strongly interacts with the AgNWs, forming a dense protective layer on their surface to improve their corrosion resistance, and reacts with the polymer substrate, forming a buffer layer to release the concentrated stress. As a result, the optimized TSCs showed superior stretchability (160%), exceptional durability (230 000 cycles), competent optoelectrical performance (18.0 ohm•sq −1 with a transmittance of 86.5%), and prominent stability. This work provides clear guidance and a strong impetus for the development of transparent stretchable electronics.

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Functional Polymer Thin Films for Establishing an Effective Electrode Interface in Sulfide‐Based Solid‐State Batteries

Cho,

Kim,

Song

et al. 2024

Adv Funct Materials

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Sulfide solid electrolytes (SSEs) have garnered significant attention for their high ionic conductivity in the development of all‐solid‐state batteries (ASSBs). However, SSEs face challenges due to poor chemical and electrochemical stability, leading to SE decomposition at the anode, which in turn increases internal resistance and reduces cycle performance. Herein, to address this issue, thin polymer layers are applied to prevent direct contact between the SSE and anode using the initiated chemical vapor deposition process. This method facilitates the uniform coating of eight types of polymers with polar functionalities on indium (In) anodes. Half‐cell tests and X‐ray photoelectron spectroscopy analysis reveals that poly(acrylic acid) and poly((perfluorohexyl)ethyl acrylate), containing ─COOH and C─F bonds respectively, effectively stabilized the In/SSE interface. In full cells assembled with polymer‐coated In and LiNi0.8Co0.1Mn0.1O2 (NCM811), capacity retention show remarkable improvement, achieving 64.8% for In@pAA and 50.7% for In@pC6FA after 100 cycles, compared to 29.0% for bare In. This study provides insights into the interaction between polar bonds in polymers and SSEs, potentially bridging a significant knowledge gap resulting from the significant lack of research investigating the relationship between polymers, one of the primary materials commonly used in ASSBs.

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A modulus-engineered multi-layer polymer film with mechanical robustness for the application to highly deformable substrate platform in stretchable electronics

Cited by 17 publications

References 44 publications

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Tailoring Silver Nanowire Nanocomposite Interfaces to Achieve Superior Stretchability, Durability, and Stability in Transparent Conductors

Functional Polymer Thin Films for Establishing an Effective Electrode Interface in Sulfide‐Based Solid‐State Batteries

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