A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS

Raj, Mayank; Monge, Manuel; Emami, Azita

doi:10.1109/jssc.2016.2553040

Cited by 48 publications

(20 citation statements)

References 15 publications

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“…However, it demands a sophisticated DSP with a high computing power. An alternative approach is to perform nonlinear equalization in the analog domain [8], [9]. Based on the data dependent transient response in the four current levels, the rising and falling PAM-4 edges are equalized separately to improve the eye quality in the optical domain, which is implemented in this design.…”

Section: Transmitter Design a Vcsel Characteristics And Equalizamentioning

confidence: 99%

“…2 illustrates the output current waveform of the asymmetric equalizer. In order to compensate unequal rise and fall time response of the laser diode, it provides deemphasis at the data rising edge and pre-emphasis at the data falling edge [9]. Besides, instead of using a fixed delay equalization, the delay time for edge equalization (t 1 , t 2 ) can be adjusted according to the current level of the data output.…”

Section: Transmitter Design a Vcsel Characteristics And Equalizamentioning

confidence: 99%

See 1 more Smart Citation

A 32 Gb/s PAM-4 Optical Transceiver With Active Back Termination in 40 nm CMOS Technology

Hsieh

Murmann

et al. 2021

IEEE Open J. Circuits Syst.

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Section: Transmitter Design a Vcsel Characteristics And Equalizamentioning

confidence: 99%

Section: Transmitter Design a Vcsel Characteristics And Equalizamentioning

confidence: 99%

A 32 Gb/s PAM-4 Optical Transceiver With Active Back Termination in 40 nm CMOS Technology

Hsieh

Murmann

et al. 2021

IEEE Open J. Circuits Syst.

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“…Fig. 1 shows a model of VCSEL [8]. The DBR mirrors are highly reflective mirrors, with the reflectivity higher than 99.9%.…”

Section: Structure and Operation Of The Devicementioning

confidence: 99%

“…A narrow spectral width is emitted by VCSELs, also, the obtained beam is nearly circular as compared with the other light sources. This and other make an efficient coupling between VCSEL and optical fiber [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Modeling of ionizing radiation effect on static and dynamic behavior of vertical cavity surface emitting lasers

Eladl¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, the effect of ionizing radiation on static and dynamic behavior of Vertical Cavity Surface Emitting Laser (VCSEL) was investigated numerically. First, the model of dynamic behavior before irradiation has been analyzed based on Convolution Theorem. Second, all interesting ionizing radiation sensitive factors are compared with their corresponding post irradiation factors. The convolution theorem is applied to get features of dynamic behavior. All interesting parameters have been outlined. The effect of resonance frequency and damping parameters have been studied. The results show that static and dynamic response of these devices are dramatically deteriorated due to irradiation flux. The device gradually changes its mode of operation from lasing mode to LED mode by exhibiting weak oscillation of the output and fast damping with the increase of ionizing radiation. This type of model can be used for high data bit rate in multimode optical fiber network.

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“…Nevertheless, in all cases the driver circuit still operates at a lower supply voltage than the VCSEL or output stage. Furthermore, higher data rates can be achieved if the cathode is driven instead of the anode because the slower p-type transistors are avoided at the output node [17]- [22]. Data rates up to 71 Gb/s have been achieved for cathode driven 850 nm-VCSEL [21] whereas 56 Gb/s is the fastest bit rate obtained in case of 1.5 µm VCSELs [3], [22].…”

Section: Introductionmentioning

confidence: 99%

Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

Malacarne

Neumeyr

Soenen

et al. 2018

J. Lightwave Technol.

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Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3-µm region for intensity modulation (IM)/direct detection optical transmissions enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs' modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based IM speed consists of making use of dedicated driver circuits implementing feedforward equalization (FFE). In this paper, we present a transmitter assembly incorporating a fourchannel 0.13-µm SiGe driver circuit wire-bonded to a novel dual 1.3-µm VCSEL array. The short-cavity indium phosphide buried tunnel junction VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5-V supply voltage only due to the implementation of a pseudobalanced regulator; it includes a two-tap asymmetric FFE, where magnitude, sign, relative delay, and pulse width distortion of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 and 4.5 km, respectively, for 28-and 40-Gb/s data rate has been demonstrated with stateof-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 2 7 −1 and 2 31 −1 length, and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with stateof-the-art VCSEL drivers is also includedt.

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A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS

Cited by 48 publications

References 15 publications

A 32 Gb/s PAM-4 Optical Transceiver With Active Back Termination in 40 nm CMOS Technology

A 32 Gb/s PAM-4 Optical Transceiver With Active Back Termination in 40 nm CMOS Technology

Modeling of ionizing radiation effect on static and dynamic behavior of vertical cavity surface emitting lasers

Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

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