A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

Dugas, J.; Oualid, J.

doi:10.1016/0379-6787(87)90026-3

Cited by 27 publications

(22 citation statements)

References 10 publications

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“…23 Combining S͑͒ with a two-dimensional analytical solution 19,38 results in a reasonable fit to the numerical result in the range of −0.1-0.3 eV shown in Fig. 23 Combining S͑͒ with a two-dimensional analytical solution 19,38 results in a reasonable fit to the numerical result in the range of −0.1-0.3 eV shown in Fig.…”

Section: Large Hole-repulsive Band Bendingmentioning

confidence: 76%

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Grain-boundary recombination in Cu(In,Ga)Se2 solar cells

Gloeckler

Sites

Metzger

2005

Journal of Applied Physics

207

125

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Two-dimensional simulations are performed to investigate the impact of grain boundaries ͑GBs͒ on Cu͑In, Ga͒Se 2 ͑CIGS͒ solar-cell performance. Charged defect levels and compositional variations at GBs are considered. Neutral grain boundaries in the CIGS layer are predicted to be most detrimental if they are parallel to the main junction and located within the depletion region. For columnar GBs with a grain size near 1 m, the effective grain-boundary recombination velocity must be less than 10 4 cm/ s to allow for record-efficiency devices. The majority-hole repulsion ͑additional donors at the GB͒ and the resulting band bending have a small effect on current collection but substantially lower the open-circuit voltage, and the combined effect is generally a lowering of the solar-cell efficiency. Minority-electron repulsion ͑additional acceptors at the GB͒ will partially mitigate GB recombination. A downshift of the valence-band energy, as predicted by the observed Cu depletion at CIGS GBs, can effectively block holes from the GB region and allow efficiencies comparable to GB-free material.

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Section: Large Hole-repulsive Band Bendingmentioning

confidence: 76%

“…[17][18][19][20] Some authors extended this approach to predict solar-cell performance, 18,19,21 but charge trapping and trap dynamics were not incorporated. [17][18][19][20] Some authors extended this approach to predict solar-cell performance, 18,19,21 but charge trapping and trap dynamics were not incorporated.…”

Section: Grain-boundary Reviewmentioning

confidence: 99%

Grain-boundary recombination in Cu(In,Ga)Se2 solar cells

Gloeckler

Sites

Metzger

2005

Journal of Applied Physics

207

125

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“…[15][16][17][18][19] All of these methods rely on the assumption that the effective surface recombination velocity at the edge of the grain boundary depletion region is constant. They do not attempt to predict the effective surface recombination velocity, which must be obtained by other means.…”

Section: Review Of Past Modelsmentioning

confidence: 99%

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

Edmiston

Heiser

Sproul

et al. 1996

Journal of Applied Physics

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This article provides a theoretical investigation of recombination at grain boundaries in both bulk and p-n junction regions of silicon solar cells. Previous models of grain boundaries and grain boundary properties are reviewed. A two dimensional numerical model of grain boundary recombination is presented. This numerical model is compared to existing analytical models of grain boundary recombination within both bulk and p-n junction regions of silicon solar cells. This analysis shows that, under some conditions, existing models poorly predict the recombination current at grain boundaries. Within bulk regions of a device, the effective surface recombination velocity at grain boundaries is overestimated in cases where the region around the grain boundary is not fully depleted of majority carriers. For vertical grain boundaries (columnar grains), existing models are shown to underestimate the recombination current within p-n junction depletion regions. This current has an ideality factor of about 1.8. An improved analytical model for grain boundary recombination within the p-n junction depletion region is presented. This model considers the effect of the grain boundary charge on the electric field within the p-n junction depletion region. The grain boundary charge reduces the p-n junction electric field, at the grain boundary, enhancing recombination in this region. This model is in agreement with the numerical results over a wide range of grain boundary recombination rates. In extreme cases, however, the region of enhanced, high ideality factor recombination can extend well outside the p-n junction depletion region. This leads to a breakdown of analytical models for both bulk and p-n junction recombination, necessitating the use of the numerical model.

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“…The relation between this effective diffusion length and the photovoltaic properties has been computed for different values of the material parameters (grain size, bulk diffusion length, effective grain boundary recombination velocity, doping level) [25]. The influence of grain boundaries on Leff when the grain size is small with respect to the bulk diffusion length is obvious in figure 10 where…”

Section: Base Doping Concentration Influence -mentioning

confidence: 99%

“…Curve 5 has been calculated in the case of the equivalent monocrystalline cell (EMC), i.e. whose diffusion length is equal to Leff-Note that the curves 1-3 cannot be extrapolated to greater effective diffusion lengths since Leff is limited for a given grain size [25].…”

Section: Base Doping Concentration Influence -mentioning

confidence: 99%

3D-Modelling of polycrystalline silicon solar cells

Dugas¹,

Oualid²

1987

Rev. Phys. Appl. (Paris)

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2014 Nous nous intéressons à l'influence des joints de grains sur les principaux paramètres qui caractérisent les photopiles en silicium polycristallin. Nous calculons la vitesse de recombinaison effective à l'aide d'une méthode auto-consistante qui tient compte de la courbure du quasi-niveau de Fermi des minoritaires dans la région de charge d'espace associée au joint et dans la région quasi neutre des grains. En nous basant sur cette étude, nous avons tracé à l'aide d'un modèle à 3 dimensions une série d'abaques qui permettent de prévoir les variations des propriétés photovoltaïques en fonction des grandeurs caractéristiques d'un matériau semiconducteur polycristallin : dimension g des grains, longueur de diffusion Ln et dopage NA des grains et vitesse de recombinaison interfaciale S aux joints de grains. Nous montrons que le rendement peut être augmenté en ajustant le dopage de la base des photopiles. Le dopage optimum est donné en fonction de la densité des états d'interface et de la dimension des grains. Enfin, nous définissons une longueur de diffusion effective dans un matériau polycristallin prenant en compte la recombinaison aux joints de grains.

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A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

Cited by 27 publications

References 10 publications

Grain-boundary recombination in Cu(In,Ga)Se2 solar cells

Grain-boundary recombination in Cu(In,Ga)Se2 solar cells

Improved modeling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells

3D-Modelling of polycrystalline silicon solar cells

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