A model of radiative recombination in <i>n</i>-type porous silicon–aluminum Schottky junction

Balucani, M.; Bondarenko, Vitaly; Franchina, Luisa; Lamedica, G.; Yakovtseva, V.; Ferrari, Aldo

doi:10.1063/1.123741

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…A 0.68 ´10 À5 PE is obtained at 980 mW of electrical power. Such emission eciency, about three orders larger, in comparison with that from both reverse biased p±n junction in silicon on insulator (SOI) structure [10] and p±n reverse diode [11] is due to the quantum con®nement eect [7]. The large signal modulation, Fig.…”

Section: Resultsmentioning

confidence: 96%

“…These devices had a stable (1000 h) electroluminescence and a 200 MHz small signal modulation capability [6]. A radiative model of the Schottky junction used in this device was developed [7]. In this work the development of a complete optical link using a PS LED together with commercial silicon device and a high frequency response to sinusoidal signals is presented.…”

Section: Introductionmentioning

confidence: 99%

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Optical link for digital transmissions using porous silicon light emitting diode

Balucani¹,

Lamedica²,

Cesare³

et al. 2000

Journal of Non-Crystalline Solids

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Optical link for digital transmissions using porous silicon light emitting diode

Balucani¹,

Lamedica²,

Cesare³

et al. 2000

Journal of Non-Crystalline Solids

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“…As shown in figure (3a), (3b), (3c), the I-V characteristics the maximum rectification ratio of ( 17) at (5)min, ( 5) at (15)min and non rectifying in (20)min. This low a rectifying behavior may be due to the increasing of the density of state in porous silicon layer inside the (n-layer) which is known as dangling bonds [10,11]. The density of this bond is increased with increasing the etching time [12].…”

Section: Results and Discussion Dark Current And Ideality Factormentioning

confidence: 99%

An Investigation of Electrical Properties of (p-n) Porous Silicon Layer

Salih Mohammed Jawad,

M. Alwan

2013

ETJ

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In this work, we studied the electrical properties of (p-n) porous silicon layer under different etching time. The (p-n) porous silicon layer prepared by photo-electrochemical etching process. The dark I-V characteristics; give us rectification ratio with wide range as a function to etching time. A high value for the rectification behavior is related for etched samples at low etching time. While the increasing of etching time to high value show a non rectification behavior in (p-n) porous samples. The values of the photocurrent for (p-n) porous sample at low etching time has very small value compared with the other (p-n) porous silicon samples at high etching time and this behavior in PSi layer in high etching time cannot be employed light emitting diode applications. While the layer prepared at low etching time is well suitable for light emitting device.

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“…In this case, blackbody radiation contributes to the EL spectra [152], and the phenomenon could be responsible for the consistently observed redshift of the EL spectra compared to the PL spectra ( Figure 5.28) [153].…”

Section: Electrochemically Etched Si (Porous Si)mentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

Cited by 9 publications

References 13 publications

Optical link for digital transmissions using porous silicon light emitting diode

Optical link for digital transmissions using porous silicon light emitting diode

An Investigation of Electrical Properties of (p-n) Porous Silicon Layer

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

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