1987
DOI: 10.1109/tns.1987.4337541
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A Model of Lattice Defects in Sapphire

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Cited by 66 publications
(50 citation statements)
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“…4, in the same temperature range (350-500°C) there also occurs an increase in the concentrations of individual F + and F centers involved in the formation of defect clusters similar to those observed upon annealing of the neutron irradiated crystals in [18]. Some details of the changes in the concentration of F + centers depending on the annealing temperature, which were established in [17] from the optical absorption spectra, are also in good agreement with the results presented Fig. 4 (curve 1) and obtained from the analysis of the TL spectra measured in the main peak.…”
Section: Resultssupporting
confidence: 57%
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“…4, in the same temperature range (350-500°C) there also occurs an increase in the concentrations of individual F + and F centers involved in the formation of defect clusters similar to those observed upon annealing of the neutron irradiated crystals in [18]. Some details of the changes in the concentration of F + centers depending on the annealing temperature, which were established in [17] from the optical absorption spectra, are also in good agreement with the results presented Fig. 4 (curve 1) and obtained from the analysis of the TL spectra measured in the main peak.…”
Section: Resultssupporting
confidence: 57%
“…A comparison of the results presented in the table with the data available in the literature has demon strated that there is a similarity between the main types of defects found in the α Al 2 O 3 samples with the ini tially perfect structure after the irradiation with neu trons [17,18] and in the anion defective α Al 2 O 3 sam ples irradiated with UV light at 625°C, which were studied in our work. Optical absorption and photoluminescence of F type defects in the anion defective corundum samples irradiated with UV light at a temperature of 625°C …”
Section: Transformation Of Optical Absorption and Photoluminescence Ssupporting
confidence: 57%
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“…O Al 2 O 3 :C tem sensibilidade a exposições que vai desde 10 Gy até 100 Gy [10,11]. Suas respostas em dosimetria individual externa, datação e dosimetria espacial para Raios-X, , , e partículas pesadas, já são bastante conhecidas [12]. Alguns exemplos são mostrados no gráfico da Figura 1.9.…”
Section: Absorção óPticaunclassified