A model for the prediction of radiation defect profiles in the semiconductor target (HgCdTe) subjected to high power short pulsed ion beams

Radiation defect formation in graded-band-gap epitaxial structures Hg1−xCdxTe after boron ion implantation

“…The experimental data can also be compared to other models. In [14] and [24] a model is proposed for the formation of profiles of electrically active radiation defects after ion implantation in MCT based on the diffusion of interstitial atoms and vacancies of mercury and formation of complexes of secondary electrically active defects. In this case, to determine the radiation defect distribution deep in the material it is necessary to solve a system of four partial differential equations numerically, describing the migration of primary defects and the formation process of complexes of secondary defects.…”

Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy

“…In the first case, an n + -p structure is formed, whereas in the secondan n + -n --p structure, which is clearly seen in Fig. 3, where shown are the profiles of spatial distributions of electrons in CMT upon Xe and В ion implantation [15].…”

“…Calculated spatial distributions of bulk electron concentration n in depth z of epitaxial CMT structure 4 (Table 1); irradiation time, s: 10 0 (1), 10 1 (2), 10 2 (3), 10 3 (4), 10 4 (5) and boron ion energy 100 keV (а). Spatial distributions of electron concentration n in depth z upon irradiation of epitaxial CMT films of series 4 by B + ions with the energy 100 keV; radiation dose Ф, cm -2 : 10 14 (1) and 10 15 (2); the calculated profiles of spatial distribution (z) (solid curves); calculation time, s: 10 2 (1) and 10 3 (2) (b). specimens at all energies.…”

“…The implant energy, E, keV: 50 (1), 100 (2), 150 (3), 180 (4), 300 (5), and 360(6). Implantation dose, Ф, cm -2 : 1015 (1, 2, 3, 4) and 3·1014 (5,6).…”

Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in Cd x Hg1–x Te epitaxial layers

“…In this case, Auger recombination is the basic recombination mechanism in narrow band semiconductors at high concentrations of nonequilibrium charge carriers [7,8], and the lifetime decreases with increasing incident optical power as 2 3 0 P − . The nonequilibrium concentration and lifetime of charge carriers have been estimated to be ~10 17 cm -3 and ~10 -12 s, respectively, for Т = 77 K, 3 10 α = cm -1 , composition х = 0.20, pulsed energy density 0.3 J/cm 2 , and pulse duration 7 3 10 − ⋅ s. The energy difference between the quasi-Fermi levels,…”