A Model for the Current–Voltage Characteristics of ITO/PEDOT:PSS/MEH-PPV/Al Photodetectors

Petrović, Jasna; Matavulj, Petar; Qi, Difei; Chambers, David Keith; Selmic, Sandra

doi:10.1109/lpt.2007.915586

Cited by 6 publications

(5 citation statements)

References 10 publications

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“…1 are derived with maximum photoexcitation intensity (the same as in Ref. [8]) from the monochromator. The similar agreement between the measurements and calculations is observed for the other four excitation intensities.…”

Section: Resultsmentioning

confidence: 99%

“…Under maximum illumination (the same as in Ref. [8]) from the monochromator we calculate the singlet exciton concentration profile in the active MEH-PPV film for the stationary case. We assume that every absorbed photon produces one singlet exciton (internal quantum efficiency of the exciton generation process is close to 1).…”

Section: Theoretical Basis and The Modelmentioning

confidence: 99%

“…We assume that field-induced exciton dissociation is very fast, much faster than singlet exciton recombination [5,7]. The majority charge carriers emerged from the exciton dissociation are hole polarons because of the two orders of magnitude smaller electron polaron mobility [8,9]. Overall photocurrent of the biased photodiode is a sum of the excitonic and polaronic component.…”

Section: Theoretical Basis and The Modelmentioning

confidence: 99%

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Field Induced Singlet Exciton Dissociation and Exciton-Exciton Annihilation in MEH-PPV Films Studied by Photocurrent Spectra

et al. 2009

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In this paper we investigate different processes which lead to charge carrier generation in ITO/PEDOT:PSS/MEH-PPV/Al photodetector.Primary photogenerated singlet excitons contribute the photocurrent directly through dissociation on the electrodes. Singlet exciton distribution in the active area of the photodetector is calculated on the base of continuity equation including exciton generation, diffusion, and recombination. Depending on the applied electric field and incident photon flux secondary charge carrier generation processes appear in the active MEH-PPV film. Two bulk charge generation mechanisms are considered. Nonlinear recombination of excitons through exciton-exciton annihilation leads to electron and hole polaron generation. Exciton states are also depopulated by exciton dissociation in the presence of high electric field. We assume hole polarons to be majority charge carriers. Polaron contribution to photocurrent is calculated by solving the continuity and drift-diffusion equations for these carriers. Photocurrent spectra are measured for different bias voltages and different incident photon flux intensities. A good agreement between experimental and simulated data confirms our theoretical approach.

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Section: Resultsmentioning

confidence: 99%

Section: Theoretical Basis and The Modelmentioning

confidence: 99%

Section: Theoretical Basis and The Modelmentioning

confidence: 99%

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Field Induced Singlet Exciton Dissociation and Exciton-Exciton Annihilation in MEH-PPV Films Studied by Photocurrent Spectra

et al. 2009

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“…Because the carrier distribution within the device surface plane is axisymmetric, only the carrier distribution along the surface normal direction needs to be considered allowing for one-dimensional (1D) simplification. Consequently, the generation of photocarriers at each position of the device surface normal direction can be calculated according to Equation (3), where

is the absorption coefficient;

is the distance from the light incident surface to the calculated given position in the material, where the light incident surface of the material is the origin coordinate of the position (material is PEDOT: PSS for inverted structure and compact TiO 2 for regular structure);

refers to the photon flux at the glass substrate/air interface, which is defined as the number of photons per unit area per second [ 31 ]. It is also noteworthy that in the commercial software of Setfos or GPVDM the light absorption calculation also considers the interferences and transfer matrix formalism are adopted.…”

Section: Methodsmentioning

confidence: 99%

Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model

Zhang

Liu

et al. 2022

Molecules

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Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes.

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“…Takođe, pretpostavljena je Poole-Frenkel-ova zavisnost pokretljivosti šupljinskih polarona od jačine električnog polja u napravi. Ostale pretpostavke modela su iste kao u [22,23]. Postupak fabrikacije naprave kao i merna postavka za karakterizaciju ITO/PEDOT:PSS/MEH-PPV/Al fotodetektora slični su kao u literaturi [24].…”

Section: Model Rezultati I Diskusijaunclassified

Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

Petrović¹,

Matavulj²,

et al. 2009

Hem Ind

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In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular) and square (bimolecular) is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V)

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A Model for the Current–Voltage Characteristics of ITO/PEDOT:PSS/MEH-PPV/Al Photodetectors

Cited by 6 publications

References 10 publications

Field Induced Singlet Exciton Dissociation and Exciton-Exciton Annihilation in MEH-PPV Films Studied by Photocurrent Spectra

Field Induced Singlet Exciton Dissociation and Exciton-Exciton Annihilation in MEH-PPV Films Studied by Photocurrent Spectra

Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model

Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

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