A Model for Ni-63 Source for Betavoltaic Application

Belghachi, Abderrahmane; Bozkurt, Kutsal; Moughli, H.; Özdemi̇r, Orhan; Amiri, B.; Talhi, A.

doi:10.12693/aphyspola.137.324

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…The ranges of H p-GaN and H i-GaN values were determined by considering the penetration depth of 17 keV electrons at about 1 μm [ 24 ]. The energy of the e-beam is the average energy of 63 Ni [ 25 , 26 ]. The contact resistance for p-GaN and n-GaN in the devices was 1 × 10 −4 Ω·cm 2 [ 27 , 28 ].…”

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

et al. 2020

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In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout). The short-circuit current density (JSC) and open-circuit voltage (VOC) of the 17 keV electron-beam (e-beam)-irradiated diode were evaluated with the variations of design parameters, such as the height and doping concentration of the intrinsic GaN region (Hi-GaN and Di-GaN), which influenced the depletion width in the i-GaN region. A high Hi-GaN and a low Di-GaN improved the Pout because of the enhancement of absorption and conversion efficiency. The device with the Hi-GaN of 700 nm and Di-GaN of 1 × 1016 cm−3 exhibited the highest Pout. In addition, the effects of native defects in the GaN material on the performances were investigated. While the reverse current characteristics were mainly unaffected by donor-like trap states like N vacancies, the Ga vacancies-induced acceptor-like traps significantly decreased the JSC and VOC due to an increase in recombination rate. As a result, the device with a high acceptor-like trap density dramatically degenerated the Pout. Therefore, growth of the high quality i-GaN with low acceptor-like traps is important for an enhanced Pout in BV cell.

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Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

et al. 2020

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“…In this work, we present a detailed analysis of the use of an electron reflector to eliminate power loss originating at the rear surface. The effectiveness of several metals to reflect escaping electrons from the source back surface was examined using a Monte Carlo program described previously (Belghachi et al 2020). The Monte Carlo program simulates the trajectory of an electron population with an energy spectra spontaneously emitted from a radioisotope material (from random positions and with arbitrary directions) and impinging a semiconducting layer through its surface.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Ni-63 planar source efficiency for betavoltaic batteries

Belghachi

Bozkurt

Özdemi̇r

et al. 2020

J. Phys. D: Appl. Phys.

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Source efficiency in planar betavoltaic batteries is drastically reduced by self-absorption and directional loss. In this paper, we present a technique for improving source efficiency by the use of beta particles reflectors based on metals. A metallic layer with a high atomic number is an effective electron reflector, capable of reflecting up to 50% of the escaping energy from the backside of a source and they are more efficient for thinner radioactive layers. The obtained results show that the design of separate planar one-sided sources with electron reflectors could be optimized to reach high efficiency before assembly with semiconductor converters. Using a Pb reflector for a 200 nm thick Ni-63 source, 38.5% of the directional lost energy could be recovered. They can lead to cost-effective technology compared to sandwiched, porous, or three-dimension microstructure designs.

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Analytical model of a nanowire-based betavoltaic device

Thomas,

LaPierre

2024

Journal of Applied Physics

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An analytical device physics model is presented for determining the energy conversion efficiency of semiconductor nanowire array-based radial (core–shell) p-i-n junction betavoltaic cells for two- and three-dimensional radioisotope source geometries. Optimum short-circuit current density Jsc, open-circuit voltage Voc, fill factor FF, and energy conversion efficiency η are determined for various nanowire properties, including dopant concentration, nanowire length, core diameter, and shell thickness, for Si, GaAs, and GaP material systems. A maximum efficiency of 8.05% was obtained for GaP nanowires with diameter 200nm (p-core diameter, i-shell, and n-shell thicknesses of 24, 29.4, and 58.6 nm, respectively), length 10μm, acceptor and donor concentrations of 1019 and 5×1018cm−3, respectively, and a 3D source geometry.

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A Model for Ni-63 Source for Betavoltaic Application

Cited by 5 publications

References 21 publications

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Enhancement of Ni-63 planar source efficiency for betavoltaic batteries

Analytical model of a nanowire-based betavoltaic device

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