A model for carbon nanotube interconnects

Xu, Y.; Srivastava, Ashok

doi:10.1002/cta.587

Cited by 34 publications

(36 citation statements)

References 51 publications

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“…In a recent work [64], we have made modification in two-dimensional fluid model to include electron-electron repulsive interaction and built a semi-classical one-dimensional fluid model. In this model, metallic single-walled carbon nanotube is considered and represented by a transmission line model.…”

Section: Carbon Nanotube Interconnect Modelingmentioning

confidence: 99%

“…The external electric field provides both the potential and kinetic energy to the fluid. As a result, one-dimensional fluid model can be expressed as follows [64],…”

Section: One Dimensional Fluid Modelmentioning

confidence: 99%

“…Equation (2) describes our one-dimensional fluid model which can be simplified in the following form [64],…”

Section: Swcnt Interconnect Modelingmentioning

confidence: 99%

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Carbon nanotubes for next generation very large scale integration interconnects

Srivastava

Sharma³

2010

J. Nanophoton

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Abstract. We investigated the application of one-dimensional fluid model in modeling of electron transport in carbon nanotubes and equivalent circuits for interconnections and compared the performances with the currently used copper interconnects in very-large-scale integration (VLSI) circuits. In this model, electron transport in carbon nanotubes is regarded as quasi one-dimensional fluid with strong electron-electron interaction. Verilog-AMS in Cadence/Spectre was used in simulation studies. Carbon nanotubes of the types single-walled, multiwalled and bundles were considered for ballistic transport region, local and global interconnections. Study of the S-parameters showed higher transmission efficiency and lower reflection losses. Theoretical modeling and computer-aided simulation studies through a complementary CNT-FET inverter pair, interconnected through a wire, exhibited reduced delays and power dissipations for carbon nanotube interconnects in comparison to copper interconnects in 22 nm and lower technology nodes. The performance of CNT interconnects was shown to be further improved with increase in number of metallic carbon nanotubes. Our study suggests the replacement of copper interconnect with the multiwalled and bundles of single-walled carbon nanotubes for the sub-nanometer CMOS technologies.

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Section: Carbon Nanotube Interconnect Modelingmentioning

confidence: 99%

“…The external electric field provides both the potential and kinetic energy to the fluid. As a result, one-dimensional fluid model can be expressed as follows [64],…”

Section: One Dimensional Fluid Modelmentioning

confidence: 99%

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Carbon nanotubes for next generation very large scale integration interconnects

Srivastava

Sharma³

2010

J. Nanophoton

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“…Carbon nanotubes (CNTs) have owned a major importance for the next generation nanoscale technologies, since their discovery [1]. CNTs exhibit a ballistic flow of electrons with electron mean free paths of several micrometers and are capable of conducting very large current densities [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…CNTs exhibit a ballistic flow of electrons with electron mean free paths of several micrometers and are capable of conducting very large current densities [1][2][3]. They are therefore proposed as potential candidates for signal and power interconnection [4,5].…”

Section: Introductionmentioning

confidence: 99%

Time-Domain Analysis of Coupled Carbon Nanotube Interconnects

Fathi

2014

Journal of Nanotechnology

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This paper describes a new method for the analysis of coupling effects including the crosstalk effects between two driven coupled single-walled carbon nanotubes (SWCNTs) and the intertalk effects between two neighboring shells in a multiwalled carbon nanotube (MWCNT), based on transmission line circuit modeling. Using rigorous calculations, a new parametric transfer function has been obtained for the analysis of the impact of aggressor line on the victim line, which depends on the various coupling parameters such as the mutual inductance, the coupling capacitance, and the tunneling resistance. The influences of various parameters such as the contact resistance and the switching factor on the time behavior of coupling effects between the two coupled CNTs and an important effect named "crosstalk-induced delay" are studied and analyzed.

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Crosstalk noise analysis in ternary logic multilayer graphene nanoribbon interconnects using shielding techniques

Kolanti¹,

Rao²

2020

Circuit Theory & Apps

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This paper presents an accurate structure for multilayer graphene nanoribbon (MLGNR) bundled interconnects to reduce the effects of crosstalk in ternary logic circuits. In the proposed structures, the signal line is surrounded by the shielding lines to reduce the crosstalk effects. The crosstalk effects such as noise peak, noise area, delay, and power consumptions are compared to effects produced by conventional methods. The impacts of process variation in the proposed structures are also presented. Additionally, the proposed MLGNR interconnect results are compared with the carbon nanotube interconnections. All the proposed circuits are implemented and simulated using HSPICE tool. The simulation results indicated that the passively shielded MLGNR interconnects provide lower crosstalk effects up to 47.7% and 69.4%, respectively, over the active and without shielded interconnects. K E Y W O R D S active and passive shieldings, crosstalk, multilayer graphene nanoribbon, ternary logic 1 | INTRODUCTION Traditionally, copper is promising interconnect material used in very large scale integrated (VLSI) circuits. Due to shrinking the VLSI technology into nanometer, it is needed to scale the dimensions of Cu on-chip interconnects. Scaling the Cu dimensions has created the surface and grain boundary scatterings that increases the interconnect resistance and capacitance. Additionally, the effects such as electromigration, skin effect, small mean free path (MFP), less electrical and thermal conductivity, stress, and process variability issues affect the Cu interconnect performance. Thus, researchers found alternative technologies such as carbon nanotubes (CNTs) 1,2 and graphene nanoribbons (GNRs). 3,4 With the invention by Iijima, 5 researchers are attracted to CNTs because of their superior properties such as capability of carrying large currents, large thermal conductivity, and mechanical strength. 6 The shape of the CNTs can be roll of hollow graphene sheets in tube shape, thus it is referred as CNTs. The CNTs act either as semiconductor or conductor depending on the rolling angle, i.e., chirality. Based on the physical properties, CNTs can be categorized as singlewalled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs). As the name depicts, the SWCNT is a single rolled sheet of graphene has radius ranges from 0.2 to 2 nm, while the MWCNT contains multiple concentric SWCNTs. The SWCNTs can be utilized as channel in field-effect transistors (FETs) as well as the metal in on-chip interconnects. 7 But the MWCNT suits only for implementing the interconnects because of its larger diameter. Meanwhile, in on-chip interconnects, MWCNTs provide better performance over the SWCNTs as they have more conducting shells, large MFP, low resistance, and large ballistic transport. 8,9

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A model for carbon nanotube interconnects

Cited by 34 publications

References 51 publications

Carbon nanotubes for next generation very large scale integration interconnects

Carbon nanotubes for next generation very large scale integration interconnects

Time-Domain Analysis of Coupled Carbon Nanotube Interconnects

Crosstalk noise analysis in ternary logic multilayer graphene nanoribbon interconnects using shielding techniques

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