1999
DOI: 10.1002/jccs.199900055
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A Model Calculation for the Isomerization and Decomposition of Chemisorbed HCN on the Si(100)‐2×1 Surface

Abstract: Ab initio molecular orbital and hybrid density functional theory calculations have been performed to study the adsorption, isomerization, and decomposition of HCN on Si(lOO)-2xl using the Si,H 12 cluster model of the surface. The results of our calculations indicate that the HCN can adsorb molecularly without a barrier onto the surface with both end-on (LM I) and side-on (LM2) positions. LMI can isomerize to LM2 with a small barrier of 8 kcal/mol. The isomerization ofLM2 by H-migration from C to the N atom, re… Show more

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Cited by 11 publications
(17 citation statements)
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“…This shift in binding energy is attributed to the increasing presence of atomic C and N surface species formed from partial decomposition of the surface CN groups. The initial decomposition of the CN groups at 473 K is similar to that found for ICN 1 and other comparable systems . As the annealing temperature is further increased, the C 1s and N 1s peaks continue to broaden and shift toward lower energies as the concentration of adsorbed atomic C and N species increases with the simultaneous decrease in the concentration of adsorbed CN.…”
Section: Resultssupporting
confidence: 74%
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“…This shift in binding energy is attributed to the increasing presence of atomic C and N surface species formed from partial decomposition of the surface CN groups. The initial decomposition of the CN groups at 473 K is similar to that found for ICN 1 and other comparable systems . As the annealing temperature is further increased, the C 1s and N 1s peaks continue to broaden and shift toward lower energies as the concentration of adsorbed atomic C and N species increases with the simultaneous decrease in the concentration of adsorbed CN.…”
Section: Resultssupporting
confidence: 74%
“…The initial decomposition of the CN groups at 473 K is similar to that found for ICN 1 and other comparable systems. 4 As the annealing temperature is further increased, the C 1s and N 1s peaks continue to broaden and shift toward lower energies as the concentration of adsorbed atomic C and N species increases with the simultaneous decrease in the concentration of adsorbed CN. Finally at around 873 K, the C 1s and N 1s peaks indicate only the atomic species with binding energies of 283 and 398 eV, respectively, remain on the Si(100) surface.…”
Section: Resultsmentioning
confidence: 98%
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“…For HCN, a stable side-on structure surrounded by transition state barriers larger than the adsorption energy is predicted. 7,17 The stronger HC bond with respect to the HSi bond gives the analogous HCN structure greater stability than that of XCN2. For XCN2, a low barrier reaction pathway driven by the formation of a strong XSi bond destabilizes this structure.…”
Section: Resultsmentioning
confidence: 99%