A mobility model including the screening effect in MOS inversion layer

Shirahata, Masayoshi; Kusano, Hiroki; Kotani, N.; Kusanoki, S.; Akasaka, Y.

doi:10.1109/43.159997

Cited by 33 publications

(9 citation statements)

References 14 publications

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“…High electric field velocity saturation is modeled through the field dependent mobility model [10]. The screening effects in the inversion layer are also considered by invoking the Shirahata mobility model [14]. Selberherr impact ionization model is used for calculating B VCEO [15].…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Kumar

Nadda

2012

IEEE Trans. Electron Devices

204

115

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A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n-and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain compared to a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets which are serious issues in ultra thin SOI structures.

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Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Kumar

Nadda

2012

IEEE Trans. Electron Devices

204

115

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“…Besides, Philips unified mobility model [28] for distinct acceptor, donor scattering and for screening has been used. The other models enabled include band gap narrowing (BGN) model [29], Selberherr impact ionization model (selb) [31] and Shirahata mobility model [32]. Shirahata mobility model is used to take into account screening effects in the inversion layer.…”

Section: Resultsmentioning

confidence: 99%

A high performance charge plasma based lateral bipolar transistor on selective buried oxide

Loan¹,

Bashir²,

Rafat³

et al. 2013

Semicond. Sci. Technol.

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In this paper, we present a new structure of lateral bipolar transistor on selective buried oxide. The device does not use highly doped regions; however, it employs the concept of creating n and p type charge plasma in undoped silicon by using metal electrodes of different work functions. The proposed device is named as the selective buried oxide based bipolar charge plasma transistor (SELBOX-BCPT). An extensive 2D simulation study has revealed that the proposed SELBOX-BCPT device not only possesses all the advantages of the conventional BCPT device, but it also addresses various severe problems of the BCPT device. A significant improvement in major issues of poor cutoff frequency ( f T ), low breakdown voltage and thermal efficiency has been achieved. It has been observed that the f T has increased by ∼94.6%, the breakdown voltage by 23.47% and the device is much cooler than the conventional BCPT device. A large current gain is obtained in the proposed device and is on a par with the conventional BCPT device. Further, by using mixed-mode simulation feature of the Atlas simulator, inverting amplifiers based on SELBOX-BCPT and the conventional BCPT have been realized. A significant improvement of 15% in switching-on transient time and 25.8% in switching-off transient time has been achieved in the proposed device in comparison to the conventional BCPT device.

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“…High electric-field velocity saturation is modelled through the field-dependent mobility model [ATLAS Device Simulation Software, Silvaco Int., Santa Clara, CA, 2014.]. The screening effects in the inversion layer are also considered by invoking the Shirahata mobility model 34 .…”

Section: Device Structure and Parametersmentioning

confidence: 99%

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

Nadda

Kumar

2015

Sci Rep

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A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is evaluated in detail. Our simulation results demonstrate that the V-BCPT not only has very high current gain but also exhibits high BVCEO · fT product making it highly suitable for mixed signal high speed circuits. The proposed device structure is also suitable for realizing doping-less bipolar charge plasma transistor using compound semiconductors such as GaAs, SiC with low thermal budgets. The device is also immune to non-ideal current crowding effects cropping up at high current densities.

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A mobility model including the screening effect in MOS inversion layer

Cited by 33 publications

References 14 publications

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

A high performance charge plasma based lateral bipolar transistor on selective buried oxide

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

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