A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs

Abstract

A comprehensive statistical investigation of the increase in resistance associated with charge trapping in atomistic simulations is presented. A wide range of doping densities and mesh spacing are considered for both classical and quantum formalisms. A doping-dependent correction factor to modify the mobility model for the atomistic simulations is proposed to suppress the error related to the fictitious charge trapping. The validity of the new mobility model is tested in the statistical simulations of the transistors corresponding to 20-nm bulk CMOS and 14-nm FinFET transistors.

A review of quantum transport in field-effect transistors

“…This form is often called the density-gradient potential, and appears to have been first used in FET simulations by Grubin and Kreskovsky [64]. The compact form of this quantum potential means that it can be incorporated into a wide range of transport models for devices of many sorts, including MESFETs (metal-semiconductor FET [52]) and the MOSFET [65][66][67].…”