A mm-Wave Trilayer AlN/ScAlN/AlN Higher Order Mode FBAR

Nam, Suhyun; Peng, Wenhao; Wang, Ding; Mi, Zetian; Mortazawi, Amir

doi:10.1109/lmwt.2023.3271865

Cited by 19 publications

(5 citation statements)

References 15 publications

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“…The discrepancy between Q 3dB and Q fit was attributed to an overestimation of the k admittance. The outstanding metrics of the present devices directly translate into significantly higher The plots include both non-lithographically and lithographically frequency-defined resonators, and a broad selection of material platforms regardless of CMOS compatibility 24,25,30,32,33,35,37,38,43,[51][52][53][54][55] .…”

Section: Standalone Nanoacoustic Resonatorsmentioning

confidence: 99%

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Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi,

Colombo,

Simeoni

et al. 2024

Nat Commun

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Over recent years, the surge in mobile communication has deepened global connectivity. With escalating demands for faster data rates, the push for higher carrier frequencies intensifies. The 7–20 GHz range, located between the 5G sub-6 GHz and the mm-wave spectra, provides an excellent trade-off between network capacity and coverage, and constitutes a yet-to-be-explored range for 5G and 6G applications. This work proposes a technological platform able to deliver CMOS-compatible, on-chip multi-frequency, low-loss, wide-band, and compact filters for cellular radios operating in this range by leveraging the micro-to-nano scaling of acoustic electromechanical resonators. The results showcase the first-ever demonstrated low insertion loss bank of 7 nanoacoustic passband filters in the X-band. Most of the filters showcase fractional bandwidths above 3% and sub-dB loss per stage in an extremely compact form factor, enabling the manufacturing of filters and duplexers for the next generation of mobile handsets operating in the X-band and beyond.

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Section: Standalone Nanoacoustic Resonatorsmentioning

confidence: 99%

“…first, third, and fifth order ladder filter were simulated with ADS® by employing the BVD-fitted representation of the extracted series and parallel resonators. More in detail, motional Q is used for 25,30,32,33,37,38,51,54 , Q 3dB for 35,43 , Q max for 52,53 , and Q p for 55 .…”

Section: Filter Simulations and Performance Enhancementmentioning

confidence: 99%

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi,

Colombo,

Simeoni

et al. 2024

Nat Commun

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“…The performance of ScAlN artificial synapses has been greatly enhanced by implementing a unique multi-layer structure, nanowire technology, and heterojunction design. [124][125][126][127] These structural improvements not only improve the response speed and memory capacity of artificial synapses, but also enhance their stability in complex environments.…”

Section: Overview Of Current Research On Scaln In Synaptic Device Sim...mentioning

confidence: 99%

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

Yang,

Tang,

Sun

et al. 2024

Mater. Horiz.

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“…Jialin et al fabricated a polarization-switchable FBAR based on Sc 0.3 Al 0.7 N, with a fundamental resonance frequency of 3.17 GHz and a k 2 e f f of 11.4% [24]. Suhyun Nam et al presented a mm wave trilayer AlN/Sc 0.3 Al 0.7 N/AlN higher-order-mode FBAR with a k 2 e f f of 5.2% in fundamental mode (GHz) and a k 2 e f f of 5.5% at higher-order response (31 GHz) [25]. Yang Zou et al proposed a Sc 0.2 Al 0.8 N-based FBAR filter, for which the measured center frequency was 4.25 GHz, and the bandwidth of the filter was 189 MHz [26].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of a Film Bulk Acoustic Wave Filter for 3.0 GHz–3.2 GHz S-Band

Gao,

Zheng,

et al. 2024

Sensors

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Film bulk acoustic-wave resonators (FBARs) are widely utilized in the field of radio frequency (RF) filters due to their excellent performance, such as high operation frequency and high quality. In this paper, we present the design, fabrication, and characterization of an FBAR filter for the 3.0 GHz–3.2 GHz S-band. Using a scandium-doped aluminum nitride (Sc0.2Al0.8N) film, the filter is designed through a combined acoustic–electromagnetic simulation method, and the FBAR and filter are fabricated using an eight-step lithographic process. The measured FBAR presents an effective electromechanical coupling coefficient (keff2) value up to 13.3%, and the measured filter demonstrates a −3 dB bandwidth of 115 MHz (from 3.013 GHz to 3.128 GHz), a low insertion loss of −2.4 dB, and good out-of-band rejection of −30 dB. The measured 1 dB compression point of the fabricated filter is 30.5 dBm, and the first series resonator burns out first as the input power increases. This work paves the way for research on high-power RF filters in mobile communication.

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A mm-Wave Trilayer AlN/ScAlN/AlN Higher Order Mode FBAR

Cited by 19 publications

References 15 publications

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

Design and Fabrication of a Film Bulk Acoustic Wave Filter for 3.0 GHz–3.2 GHz S-Band

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