A Mixed-Signal Spectroscopic-Grade and High-Functionality CMOS Readout Cell for Semiconductor X-$\gamma$ Ray Pixel Detectors

Caccia, S.; Bertuccio, G.; Maiocchi, D.; Malcovati, P.; Ratti, N.; Martin, D.

doi:10.1109/tns.2008.2003981

Cited by 18 publications

(5 citation statements)

References 13 publications

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“…1). Similar scintillator-camera detector configurations have been used for gamma-and x-ray detection in previous studies [3,6,9,15,8,7,11]. However, the present work differs in that the entire camera is used as a "single-channel" detector, without either energy resolution, imaging information, or photo-electron amplification.…”

Section: Methodsmentioning

confidence: 99%

On the use of NaI scintillation for high stability nuclear decay rate measurements

Bergeson,

Ware,

Hawk

2017

Preprint

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We demonstrate the linearity and stability of a gamma-ray scintillation detector comprised of a NaI(Tl) crystal and a scientific-grade CMOS camera. After calibration, this detector exhibits excellent linearity more than three decades of activity levels. Because the detector is not counting pulses, no dead-time correction is required. When high activity sources are brought into close proximity to the NaI crystal, several minutes are required for the scintillation to achieve a steady state. On longer time scales, we measure drifts of a few percent over several days. These instabilities have important implications for precision determinations of nuclear decay rate stability.

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Section: Methodsmentioning

confidence: 99%

On the use of NaI scintillation for high stability nuclear decay rate measurements

Bergeson,

Ware,

Hawk

2017

Preprint

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“…• the front-end ASIC is based on the architecture of the Readout Cell presented in [9], where all stages but the preamplifier are considered already optimized. The ASIC will also contain an ADC consuming a given power (e.g.…”

Section: Anode Pitch Optimizationmentioning

confidence: 99%

Large-area linear Silicon Drift Detector design for X-ray experiments

Rachevski

Zampa

et al. 2014

J. Inst.

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A large area, 120×72 mm 2 , linear Silicon Drift Detector (SDD) has been developed for X-ray spectroscopy in the 2−50 keV energy range. Elaborated via a number of prototypes, the final detector design, REDSOX1, features elements to meet the requirements of a modern spaceborne X-ray detector with a power consumption per sensitive area below 0.5 mW/cm 2 , offering the possibility to perform timing and spectroscopy X-ray observations on a ten microseconds scale.

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“…3. The circuit is based on the same architecture presented in [9], but it has been modified for handling electrons instead of holes as input signal and its functionality has been optimized for reading out silicon drift detectors with the required input signal range (0.57100 keY, corresponding to about 135727000 e-). The ROC is divided into two main parts: an analog section, which includes a low-noise preamplifier, a pulse shaper and peak stretcher, as well as a mixed-signal section, which includes an amplitude discriminator, a peak discriminator, and the digital logic required for reset and pile-up rejection.…”

Section: A Read-out Channelmentioning

confidence: 99%

A 32-channel ASIC for X-Ray detectors

Picolli

Caccia

Grassi

et al. 2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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In this paper we present a 32-channel integrated circuit (ASIC) designed for a multi-anode silicon drift detector for X-ray imaging and spectroscopy (0.5 -:-100 keY). The ASIC includes 32 read-out front-end channels (ROC), each consisting of a low-noise preamplifier, a second-order RC-CR pulse shaper, a peak stretcher, an amplitude and a peak discriminator, as well as a reset and pile-up rejection circuit. The ASIC includes also a digital configuration register, supporting daisy-chain connection , for setting the ROC parameters for signal processing. At room temperature the equivalent noise charge is 18 e�s and the linearity error is lower than ±S% over the complete input range.The ASIC has been designed in a 0.3S-llm CMOS technology with a 3.3-V power supply. A single ROC occupies an area of 200 X 380 Ilm2• The area of the whole ASIC is 6500 X 2260 Ilm2 and the power consumption is 0.4 m W per channel.

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A Mixed-Signal Spectroscopic-Grade and High-Functionality CMOS Readout Cell for Semiconductor X-$\gamma$ Ray Pixel Detectors

Cited by 18 publications

References 13 publications

On the use of NaI scintillation for high stability nuclear decay rate measurements

On the use of NaI scintillation for high stability nuclear decay rate measurements

Large-area linear Silicon Drift Detector design for X-ray experiments

A 32-channel ASIC for X-Ray detectors

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