A Miniaturized Marchand Balun in CMOS With Improved Balance for Millimeter-Wave Applications

Xu, Leijun; Sjöland, Henrik; Törmänen, Markus; Tired, Tobias; Pan, Tianhong; Bai, Xue

doi:10.1109/lmwc.2013.2288270

Cited by 15 publications

(4 citation statements)

References 8 publications

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“…These parameters are important in the design of millimeter-wave (MMW) circuits and systems [1]. Marchand balun [2][3][4][5][6][7][8][9][10], which utilizes two coupled line sections, is widely used in MMW frequency circuit design, due to its wide operating bandwidth and easy implementation.…”

Section: Introductionmentioning

confidence: 99%

Ka-Band Marchand Balun with Edge- and Broadside-Coupled Hybrid Configuration

et al. 2020

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This article presents a novel Ka-band Marchand balun implemented in 0.13-μm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge- and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with conventional edge-coupled or broadside-coupled structures, the proposed balun achieves the lowest insertion loss of 1.02 dB across a wide 1-dB bandwidth from 29.0 GHz to 46.0 GHz, with a core size of 270 μm × 280 μm.

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Section: Introductionmentioning

confidence: 99%

Ka-Band Marchand Balun with Edge- and Broadside-Coupled Hybrid Configuration

et al. 2020

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“…The Marchand type balun has found widespread application, due to its wide bandwidth. Several modifications and enhancements has been reported, among these are techniques for bandwidth enhancement [2], miniturization [3], tuning of phase balance [4] or center frequency [5] and impedance scaling [6]. The impedance scaling is only suggested between real valued generator and load impedances.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of complex impedance transforming marchand baluns

Michaelsen

Johansen

Tamborg³

2014

2014 20th International Conference on Microwaves, Radar and Wireless Communications (MIKON)

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Abstract-A new type of Marchand balun is presented in this paper, which has the property of complex impedance transformation. To allow the Marchand balun to transform between arbitrary complex impedances, three reactances should be added to the circuit. A detailed analysis of the circuit gives the governing equations. To verify the theory, a design and electromagnetic simulation of a lumped element Marchand balun is made in a SiGe BiCMOS technology. The lumped element impementation is favorable because capacitors are placed where the additional reactances should be added. Thus it is possible to absorb a positive reactance by reducing a capacitor. At the design frequency of 10.5 GHz it matches 50Ω to 50 − j66Ω. It has an insertion loss of 5.1 dB, an input reflection of -20.8 dB, as well as phase and magnitude imbalance better than 0.2• and 0.12 dB, respectively.

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“…For instance, in characterizing broadband differential circuits, such as distributed amplifiers or frequency multipliers, the bandwidth of the balun itself must be larger than the circuits. In the case of mixers, the bandwidth, insertions loss, and phase and amplitude imbalance of the balun can directly influence its conversion gain.Baluns can be broadly divided into active and passive baluns [10][11][12][13][14][15][16][17]. Active baluns have the advantage of a finite gain and occupy a very small area.…”

mentioning

confidence: 99%

“…Baluns can be broadly divided into active and passive baluns [10][11][12][13][14][15][16][17]. Active baluns have the advantage of a finite gain and occupy a very small area.…”

mentioning

confidence: 99%

High Performance Asymmetric Coupled Line Balun at Sub-THz Frequency

Ali

Yun

et al. 2019

Applied Sciences

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In this paper, we report a high-performance balun with characteristics suitable for future broadband sub-THz differential circuits. The idea of the balun is based on three asymmetric coupled lines, which enhance the odd mode capacitances to equalize the even/odd mode phase velocities. The inner line of the three asymmetric coupled lines is configured to form the open stub ( λ /2), while the outer lines form short stubs ( λ /4). To further reduce the phase imbalance, the short stubs in one of the arms of the balun are connected with vias and a lower metal layer. The balun is developed using the standard 130-nm SiGe BiCMOSback-end process and EM simulated with ADS momentum and Sonnet. The −10-dB reflection coefficient (S 11 ) bandwidth of the balun is 136 GHz (88–224 GHz). It shows insertion loss (including RF pads) <1.5 dB, phase imbalance <7 degrees, and amplitude imbalance <1 dB at 94–177 GHz. Furthermore, a scaled-down version of the balun operates on the WR-6, WR-5, and WR-4 frequency bands without significant degradation in its performance. Such characteristics of the balun make it an ideal candidate for various broadband differential circuits.

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A Miniaturized Marchand Balun in CMOS With Improved Balance for Millimeter-Wave Applications

Cited by 15 publications

References 8 publications

Ka-Band Marchand Balun with Edge- and Broadside-Coupled Hybrid Configuration

Ka-Band Marchand Balun with Edge- and Broadside-Coupled Hybrid Configuration

Analysis and design of complex impedance transforming marchand baluns

High Performance Asymmetric Coupled Line Balun at Sub-THz Frequency

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