2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2011
DOI: 10.1109/bctm.2011.6082752
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A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing

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Cited by 20 publications
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“…SiGe HBTs are typically combined with CMOS devices in the form of BiCMOS processes, which are offered by various vendors including IHP [26], ST [29], Tower Semiconductor [30], or Globalfoundries [31]. As a consequence, complex RF and millimeter-wave systems, such as transceivers for communication and radar systems up into the THz range, can be realized, as outlined in Sections III and IV.…”
Section: B Modern Sige Bicmos Technologiesmentioning
confidence: 99%
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“…SiGe HBTs are typically combined with CMOS devices in the form of BiCMOS processes, which are offered by various vendors including IHP [26], ST [29], Tower Semiconductor [30], or Globalfoundries [31]. As a consequence, complex RF and millimeter-wave systems, such as transceivers for communication and radar systems up into the THz range, can be realized, as outlined in Sections III and IV.…”
Section: B Modern Sige Bicmos Technologiesmentioning
confidence: 99%
“…This article focuses on the commercially most important applications of radar and wireless communications. While 24-GHz automotive radar and Ka-band satellite communication (26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40) have been around for years, only the recent launch of 5G around 28/39 GHz has triggered the millimeter-wave hype. The technology relies on phased arrays This work is licensed under a Creative Commons Attribution 4.0 License.…”
Section: Introductionmentioning
confidence: 99%