A micromachined 585 GHz Schottky mixer

Hui, K.; Hesler, Jeffrey L.; Kurtz, D.S.; Bishop, W.L.; Crowe, T.W.

doi:10.1109/75.867855

Cited by 13 publications

(5 citation statements)

References 6 publications

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“…7. Additional measured results for a 585 GHz fundamental mixer similar to that in [34] have been presented in [54] 4 , with a minimum receiver noise temperature of 1700 K. This noise temperature is in good agreement with the minimum obtained with MCHB for V, see Fig. 7.…”

Section: Validation Of the Mixer Simulation Toolsupporting

confidence: 79%

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Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band

Pardo

Grajal

Pérez

2016

IEEE Trans. THz Sci. Technol.

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This paper presents a simulation tool for the analysis and design of Schottky mixers which is able to evaluate self-consistently both the conversion losses and the noise temperature. The tool is based on a Monte Carlo model of the diode coupled with a multi-tone harmonic balance technique. A remarkable feature of this tool is that it avoids the need of analytical or empirical models. The validation of the tool has been carried out by comparing simulation results with measurements of mixers published in the literature up to 2.5 THz. The usefulness of Schottky diodes as frequency mixers above 2.5 THz is analyzed. Additionally, the range of application and the limitations of simpler simulation tools based on lumped equivalent circuits or drift-diffusion models have been evaluated using the Monte Carlo model as a reference.

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Section: Validation Of the Mixer Simulation Toolsupporting

confidence: 79%

“…According to[34], bias voltages used in measurements were optimized at each LO power to minimize the noise temperature 4. The epilayer doping concentration of the diode in[54] is 4 10 cm , while for the diode in[34] is 2 10 cm .…”

mentioning

confidence: 99%

Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band

Pardo

Grajal

Pérez

2016

IEEE Trans. THz Sci. Technol.

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“…Micromachined packages for THz MMICs can be implemented in similar fashion with metallic split blocks consisting of two pieces. In [119], a 585-GHz mixer based on a GaAs Schottky barrier diode on quartz substrate was packaged in silicon split blocks in which a horn antenna, quartz substrate channel, and alignment grooves were monolithically integrated. Metal shims were placed in the alignment groves to guide the two halves into place.…”

Section: A Silicon Micromachiningmentioning

confidence: 99%

Packages for Terahertz Electronics

Song

2017

Proc. IEEE

107

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| In the last couple of decades, solid-state device technologies, particularly electronic semiconductor devices, have been greatly advanced and investigated for possible adoption in various terahertz (THz) applications, such as imaging, security, and wireless communications. In tandem with these investigations, researchers have been exploring ways to package those THz electronic devices and integrated circuits for practical use. Packages are fundamentally expected to provide a physical housing for devices and integrated circuits (ICs) and reliable signal interconnections from the inside to the outside or vice versa. However, as frequency increases, we face several challenges associated with signal loss, dimensions, and fabrication. This paper provides a broad overview of recent progress in interconnections and packaging technologies dealing with these issues for THz electronics. In particular, emerging concepts based on commercial ceramic technologies, micromachining, and 3-D printing technologies for compact and lightweight packaging in practical applications are highlighted, along with metallic split blocks with rectangular waveguides, which are still considered the most valid and reliable approach.

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“…2sA (t) indicates the 2nd-order nonlinear voltage source at frequency [ω P + (ω IF 1 − ω IF 2 )] and, as before, I m,±l denotes the m-th Fourier coefficient corresponding to input tone ±ω IF l . Aligning corresponding harmonics in(24) leads to the general relationship…”

mentioning

confidence: 99%

Linearity Analysis of CMOS Parametric Upconverters

2020

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This paper applies a conversion matrix approach to the linearity analysis of a varactorbased 36-GHz CMOS parametric upconverter. The nonlinear model of the upconverter is explained and derived. The comparison between the measurements, simulations, and theoretical calculation is presented to show excellent agreements: 0.5-and 1.5-dB differences in conversion gains for lower-sideband and uppersideband upconversion, and less than 2.9-dB in both IIP 2 and IIP 3 when converting a 1-GHz signal to 36-GHz output.

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A micromachined 585 GHz Schottky mixer

Cited by 13 publications

References 6 publications

Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band

Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band

Packages for Terahertz Electronics

Linearity Analysis of CMOS Parametric Upconverters

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