A micro-undulator fabricated by LIGA processes

Turner, L.R.; Nassiri, A.; Mills, F.; Feinerman, Alan

doi:10.1109/20.511406

Cited by 6 publications

(5 citation statements)

References 3 publications

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“…This gave a peak field of 25.5 G, in agreement with the 26. 6 G predicted by a 2-D computation. The full undulator design and the initial measurements are reported in [6].…”

Section: Microundulatormentioning

confidence: 99%

See 1 more Smart Citation

Feasibility studies of a compact mm-wave linac FEL

Nassiri

Kustom

Kang

et al. 1996

Nuclear Instruments and Methods in Physics Research Section A:

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“…This gave a peak field of 25.5 G, in agreement with the 26. 6 G predicted by a 2-D computation. The full undulator design and the initial measurements are reported in [6].…”

Section: Microundulatormentioning

confidence: 99%

“…6 G predicted by a 2-D computation. The full undulator design and the initial measurements are reported in [6]. 6 …”

Section: Microundulatormentioning

confidence: 99%

Feasibility studies of a compact mm-wave linac FEL

Nassiri

Kustom

Kang

et al. 1996

Nuclear Instruments and Methods in Physics Research Section A:

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“…Since that time a continuous increase in the aspect ratio has been observed. This trend is based on the requirements of numerous manufacturing applications, for example X-ray gratings (Reznikova et al, 2008), gas chromatography columns (Bhushan et al, 2007), micro-capillary filters (Kondo et al, 2010), magnetic coils (Turner et al, 1996), X-ray telescopes (Ezoe et al, 2010), micro-gears (Meyer et al, 2008), micro-capacitors with high AR cantilever (Haluzan et al, 2008), etc. To this end, the sidewalls in the technological layer of so called resist should be close to vertical.…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of ultra high aspect ratio microstructures made by ultra deep X-ray lithography

Nazmov

Reznikova

Mohr

et al. 2015

Journal of Materials Processing Technology

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“…The aforementioned approaches for the replication of HAR structures are based on the use of silicon etching and 2PP DWL and three different replication methods T-NIL, UV-NIL, and micromoulding in capillaries (MIMIC) 5,36 . Hard stamps, such as silicon or inorganic-organic hybrid polymers, that is, Ormocers, are ideal candidates for T-NIL with squeeze flow in which a pressure is applied for a complete filling of the structures 42 , while soft stamps, such as UV-curable polydimethyl siloxane (UV-PDMS), enable conformation to surface undulations of the moulds by capillary action [43][44][45] .…”

Section: Fabrication Approach Considerationsmentioning

confidence: 99%

High-aspect-ratio nanoimprint process chains

et al. 2017

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Different methods capable of developing complex structures and building elements with high-aspect-ratio nanostructures combined with microstructures, which are of interest in nanophotonics, are presented. As originals for subsequent replication steps, two families of masters were developed: (i) 3.2 μm deep, 180 nm wide trenches were fabricated by silicon cryo-etching and (ii) 9.8 μm high, 350 nm wide ridges were fabricated using 2-photon polymerization direct laser writing. Both emerging technologies enable the vertical smooth sidewalls needed for a successful imprint into thin layers of polymers with aspect ratios exceeding 15. Nanoridges with high aspect ratios of up to 28 and no residual layer were produced in Ormocers using the micromoulding into capillaries (MIMIC) process with subsequent ultraviolet-curing. This work presents and balances the different fabrication routes and the subsequent generation of working tools from masters with inverted tones and the combination of hard and soft materials. This provides these techniques with a proof of concept for their compatibility with high volume manufacturing of complex micro-and nanostructures.Keywords: cryo-etching; direct 6 write laser lithography; high aspect ratio; moulding; nanoimprint lithography; Ormocer; photonic nanofences; 2-photon polymerization INTRODUCTION High-aspect-ratio microstructures (HARMS), that is, structures with a large height/width ratio, have found many applications 1,2 such as X-ray gratings 3 , gas chromatography columns 4 , magnetic coils 5 , X-ray telescopes 6 , micro-gears 7 , micro-capacitors with highaspect-ratio (HAR) cantilevers 8 , and micromechanical and microoptical elements 9,10 . These structures exhibit aspect ratios (ARs) of over 10 and almost vertical sidewalls, making them much more challenging to develop than the structures typically used in planar technology with moderate ARs of 1 to 2. They are therefore characterized by an intermediate state between two-and threedimensional (2D and 3D), that is, a 2D planar design that is extended into the vertical dimension and often called . There are several methods to produce HAR structures on typical planar substrates, most of them relying on the anisotropy of subtractive pattern transfer of a low AR masking layer into an underlying resist or substrate, that is, by using mask based ultraviolet (UV)-photolithography (PL) with an AR up to 5, silicon etching (for example, dry etching) with an AR up to 20, and direct write laser lithography (DWL) and X-ray lithography with ARs 420 (Refs. 12-15). These methods are continually being improved to produce a higher AR and smaller lateral dimensions. Furthermore, they are enlarged by new techniques that are often subsets of etching processes with different advantages and disadvantages. One of those challenges is the suitability for submicron and nanopatterning, that is, structures with lateral sizes much smaller than 1 μm and the possibility to combine micro-with nanostructures in the same material.There are three main approaches: (1)...

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A micro-undulator fabricated by LIGA processes

Cited by 6 publications

References 3 publications

Feasibility studies of a compact mm-wave linac FEL

Feasibility studies of a compact mm-wave linac FEL

Development and characterization of ultra high aspect ratio microstructures made by ultra deep X-ray lithography

High-aspect-ratio nanoimprint process chains

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