A Method to Balance Dynamic Current of Paralleled SiC MOSFETs With Kelvin Connection Based on Response Surface Model and Nonlinear Optimization

Zhao, Cheng; Wang, Laili; Zhang, Fan; Yang, Fengtao

doi:10.1109/tpel.2020.3009008

Cited by 42 publications

(12 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The study in [85] can effectively improve the current balance among paralleled dies by adjusting the length of the bonding wires to mitigate the parasitic parameter variability of the power loops, as shown in Figure 22. This method requires no additional design and only some modifications on bonding lines; thus, it is compatible with the traditional packaging technologies.…”

Section: Common Source Parasitic Inductancementioning

confidence: 99%

Review of the designs in low inductance SiC half‐bridge packaging

Yang

et al. 2022

IET Power Electronics

View full text Add to dashboard Cite

Silicon carbide (SiC) device has become the primary choice for high-efficiency power electronic equipment due to its excellent performance. However, its higher switching frequency and faster switching speed have also incurred new challenges, such as low parasitic inductance packaging. Despite a significant amount of literature to overview the low parasitic inductance packages, most of them focus on total parasitic inductance from different packaging technology. Here, from the viewpoint of partial inductance which includes gate loop, power loop and common source, the designs for different inductances are surveyed. The power loop is further discussed from power terminals, bonding wires and direct bonded copper (DBC) conductor traces. The effects and sources of these inductances are analyzed. Furthermore, the typical design solutions to reduce the inductances are summarized. Finally, the challenges of SiC packages are presented.

show abstract

Section: Common Source Parasitic Inductancementioning

confidence: 99%

Review of the designs in low inductance SiC half‐bridge packaging

Yang

et al. 2022

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…To increase the current ratings, discrete devices are usually used in parallel for highpower applications (Bertelshofer et al, 2019). Due to a mismatch in the parameters of the devices (Wang G. et al, 2014;Ke et al, 2018;Zhao et al, 2021a;Zhao et al, 2021b) and asymmetrical layout design Tiwari et al, 2015;La Mantia et al, 2017), the current distribution among parallel-connected discrete devices is uneven, leading to imbalanced power loss distribution, uneven temperature rise and risk of device thermal runaway.…”

Section: Uneven Current Distribution Concernmentioning

confidence: 99%

“…In Wang G. et al (2014), thirty samples of SiC MOSFET (C2M0160120DA) from the same vendor under room temperature are evaluated and it has been reported that the difference of R DSon can reach up to 20% and the difference of V th can reach up to 24% (Wang G. et al, 2014). The variation in the parameters of devices, called device mismatch, causes unequal current distribution (Wen et al, 2021;Zhao et al, 2021a;Zhao et al, 2021b). In addition, due to asymmetrical layout design, the discrepancy in the parasitic inductances of the circuit also causes uneven current distribution Tiwari et al, 2015;La Mantia et al, 2017;Hu and Shao, 2021).…”

Section: Categories Of Current Imbalance and Causesmentioning

confidence: 99%

“…It is concluded that when the temperature is raised from 25 °C to 175 °C, the R DSon of Si, SiC and GaN increases by 3×, 1.5× and 2×, respectively. Hence, the intrinsic current sharing capability of WBG MOSFETs is not as prominent as that of Si counterparts (Wang G. et al, 2014;Xue et al, 2014a;Ke et al, 2018;Zeng et al, 2020;Zhao et al, 2021a;Zhao et al, 2021b). In addition, the value of gate to source voltage (V gs ) also influences the R DSon (Wang G. et al, 2014).…”

Section: Static Current Imbalancementioning

confidence: 99%

See 1 more Smart Citation

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

View full text Add to dashboard Cite

Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.

show abstract

“…Response surface method includes many experimental design and data processing techniques, such as experimental design, regression equation modeling, model significance test, and factor combination condition optimization. By fitting the functional relationship between the response and various factors, drawing the response surface and contour line, the response value corresponding to each factor level can be easily obtained; then the optimal response value corresponding to the level of each factor can be found out [25][26][27][28]. e RSM has several advantages, such as the efficiency to predict the model for each response, to construct a robust model with a small number of experimental data points, to assess the interaction effect between the factors, and to locate the optimal response [29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Effect of Concentration and Suspension Agent (HPMC) on Properties of Coal Gangue and Fly Ash Cemented Filling Material

Yang

Jin

Yin³

et al. 2021

Shock and Vibration

View full text Add to dashboard Cite

Cemented coal gangue-fly ash backfill (CGFB) mixtures are utilized as the filling materials for backfilling the underground openings in coal mines. The freshly prepared CGFB slurries are commonly transported into the gobs through a pipeline. The mixture ratio of slurry concentration and suspending agent (HPMC) plays an essential role in transporting the slurry to goaf smoothly and efficiently. In this paper, the influence of slurry concentration and HPMC on the performance of coal gangue-fly ash cemented filling material was studied based on the response surface method. The prediction model of CGFB slurry slump flow, segregation rate, and bleeding rate was constructed. It is concluded that the segregation rate and slump flow of slurry are more sensitive to the variation of concentration. On the other hand, the bleeding rate of slurry is more sensitive to the change of HPMC content. Based on the established model, the reasonable mix proportion range of slurry concentration and suspending agent (HPMC) was obtained. In addition, three new CGFB mixtures have been tested, and the experimental results are in good agreement with the predicted values.

show abstract

A Method to Balance Dynamic Current of Paralleled SiC MOSFETs With Kelvin Connection Based on Response Surface Model and Nonlinear Optimization

Cited by 42 publications

References 27 publications

Review of the designs in low inductance SiC half‐bridge packaging

Review of the designs in low inductance SiC half‐bridge packaging

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Effect of Concentration and Suspension Agent (HPMC) on Properties of Coal Gangue and Fly Ash Cemented Filling Material

Contact Info

Product

Resources

About