A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape

Pauw, L. J. van der

doi:10.1142/9789814503464_0017

Cited by 913 publications

(1,004 citation statements)

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“…The incorporation of ϪCl in the form of ϪCOϪCl in the MWCNTs (see Supporting Information) and attachment of the Au- CysNPs to the MWCNTs have been successfully proven by XPS; this was otherwise very difficult by FTIR due to the limit of detection for that technique, owing to the fact that mild oxidation was used and so fewer functional groups were introduced. The van der Pauw four-probe method 33 was used to measure (Keithley 6221 and 6514) the sheet resistivity of the vacuum-filtered films after they were transferred onto glass substrates. The resistivity of four films from the same mixed cellulose ester (MCE) membrane before annealing was ϳ580 k⍀/▫.…”

Section: Resultsmentioning

confidence: 99%

Site-Specific Deposition of Au Nanoparticles in CNT Films by Chemical Bonding

Velamakanni¹,

Magnuson

Ganesh

et al. 2010

ACS Nano

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T he overall electrical, thermal, and mechanical performance of networks of overlapped and crisscrossed carbon nanotubes (CNTs) (also called buckytube paper, CNT films, etc.) is largely determined by the nature of the contact at the nodeOthat is, the intersection of overlapping CNTs. To our knowledge, there has been no work to date on selective modification of the nodes in CNT networks, and we report here on such an effort, with an eye towards improving the transparent electrode performance of such networks.Transparent electrical conductors are a key component in modern technology, used in various applications 1,8,9 including, but not limited to, solar cells, flat panel displays, solid state lighting, still-image recorders, lasers, optical communication devices, electrodes in flexible electronics, and sensitive bolometers for detecting infrared radiation. Transparent conductive films (TCFs) based on CNTs are a promising candidate for potential use in all of the above applications and have been touted as a possible replacement for the currently used indium tin oxide (ITO) films. CNT films could offer a lower cost solution that is far more compatible with high volume production techniques, and, unlike metal oxide films, CNT films can be deposited with high volume roll-to-roll processes. CNT films are far more compliant than brittle metal oxide films, suggesting their use in plastic electronics and solar cells, thus offering interesting possibilities for both fundamental science and important technological areas. Random or quasi-random networks of CNTs ("CNT nets") have been made in thin film form and studied for use in applications such as those mentioned above. 1,8,9 However, application of CNT networks as thin films for TCFs has a major limitation, their relatively high electrical resistance. If the electrical conductivity of CNT nets could be significantly improved, the technological value of these thin films as transparent conductive electrodes would be enormously improved. The overall electrical resistance of CNT based TCFs is largely determined by the resistance at the crossing points (also called nodes or junctions) of the CNTs. We define the CNT network as being composed of nodes and segments. Modeling studies of networks of onedimensional elements have shown a resistivity dependence on segment length distributions and node resistances. 2 The electrical resistance at the nodes of CNT networks has been estimated through Monte Carlo modeling to be approximately 100 times larger than the quantum resistance of 6.5

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Section: Resultsmentioning

confidence: 99%

Site-Specific Deposition of Au Nanoparticles in CNT Films by Chemical Bonding

Velamakanni¹,

Magnuson

Ganesh

et al. 2010

ACS Nano

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“…The LEDs with the nanowire contact layer exhibit a forward-bias turn-on voltage of 0.55 V at an injection current of 10 mA, which is a marked improvement over LEDs and quantum cascade lasers (QCLs) with oxidized Ni/Au, Ni/Cr or thin film ITO/Ag/ITO sandwich contacts [3]. We conducted electrical measurements on a series of nanowire-containing segments using corner contacts to areas of the nanowire layer in the van der Pauw geometry [18]. The conductivity of the pure (In 1.875 Sn 0.125 )O 3 branched nanowires is typically measured to be 1053.5 ± 42.3 S cm -1 at room temperature, which is similar to the values previously reported for other individual nanowires and two orders of magnitude greater than individual In 2 O 3 or SnO 2 nanowires [2].…”

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confidence: 99%

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

et al. 2009

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Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices

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“…The electrical resistivities of * Graduate Student, Kyushu University. the Cu-N and the Al-N thin films were investigated with the van der Pauw method 7) at room temperature. However, the stoichiometric AlN thin films were insulator so we could not measure their resistivity.…”

Section: Methodsmentioning

confidence: 99%

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

2002

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Copper and Aluminum Nitride thin films were prepared by the reactive R. F. sputtering method with controlling the N 2 gas content. Their electrical resistivity and optical bandgap energy were varied as the content of N 2 gas during the deposition. For example, the electrical resistivity of the copper nitride thin films increased from 10 −1 to 10 1 m as the nitride approaches to the stoichometric Cu 3 N. To modify the electrical and the optical properties of the nitride thin films, hydrogen was introduced by low energy ion implantation. The electrical resistivity of nearly stoichiometric Cu 3 N thin films decreased from 10 1 to 10 −4 m after hydrogen ion implantation for 30 minutes because this treatment at even 3 keV formed many irradiation defects near the surface of the Cu 3 N thin films. On the other hand, the electrical and the optical properties of insulating AlN thin films were hardly modified with the 7 h implantation. But the electrical resistivity and the optical bandgap energy of the Al rich Al-N thin films could be increased by the hydrogen ion implantation.

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A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape

Cited by 913 publications

References 0 publications

Site-Specific Deposition of Au Nanoparticles in CNT Films by Chemical Bonding

Site-Specific Deposition of Au Nanoparticles in CNT Films by Chemical Bonding

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

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