A method for the deposition of transparent conducting thin films of tin oxide

Tarey, R. D.; Raju, T. A.

doi:10.1016/0040-6090(85)90070-7

Cited by 109 publications

(47 citation statements)

References 16 publications

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“…The absorption coefficient () in the UV region of these Zn 1Àx Mg x O thin films can be calculated from I ¼ I o e Àt , 30) where I is intensity of the transmitted light, I o is the intensity of incident light and t is the thickness of the Zn 1Àx Mg x O films. Figure 5(b) is the plot of ðhÞ 2 vs. photon energy.…”

Section: Resultsmentioning

confidence: 99%

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

2008

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Polycrystalline thin-films of Zn 1Àx Mg x O (0 x 0:36) have been prepared by a sol-gel method and a spin-coating technique. In this work, the authors investigate the effects of the Mg addition on crystallization, microstructure and optical properties for ZnO thin films. Mg was incorporated into ZnO thin films that were deposited onto glass substrates by a spin coating technique. The as-deposited films were preheated at 300 C for 10 min and then annealed at 500 C for 1 h. The results show that addition of Mg-species in ZnO films markedly decreased surface roughness, improved transparency in the visible range and increased resistivity. Among the Zn 1Àx Mg x O films investigated in the present study, the Zn 0:8 Mg 0:2 O thin film exhibited the best properties, namely single wurzite phase, an optical transmittance of 94.7%, an RMS roughness of 1.63 nm and a resistivity of 8:3 Â 10 5 -cm.

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Section: Resultsmentioning

confidence: 99%

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

2008

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“…For a direct bandgap material, such as a ZnO-based thin film, n ¼ 1=2 is the most suitable value. The absorption coefficient () in the UV region of these Zr-doped ZO thin films can be calculated from I ¼ I o e Àt , 23) where I is intensity of the transmitted light, I o is the intensity of incident light and t is the thickness of the ZZO films. The bandgap values were extrapolated from the straight sections of the plot of ðhÞ 2 versus photo energy (h).…”

Section: Resultsmentioning

confidence: 99%

Optimization of Zr-Doped ZnO Thin Films Prepared by Sol-Gel Method

Tsay

Fan

2008

Mater. Trans.

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Semiconductor thin films of Zr-doped ZnO, with Zr concentrations varying from 0 to 5 at%, have been prepared using a sol-gel method. Crystallinity, microstructure, and optical properties affected by Zr concentration were investigated. In this study, Zr-doped ZnO thin films were deposited onto alkali-free glass substrates by spin-coating. The as-deposited films were preheated at 300 C and then annealed at 500 C in air. The experimental results showed that doping ZnO thin films with Zr not only refined the grain size but also increased transmittance and resistivity. Among all the thin films investigated in the present study, the 3 at% Zr-doped ZnO thin film exhibited the best properties with a transmittance of 86.3% and a RMS roughness value of 5.86 nm. In addition, thin-film transistors were fabricated by spin-coating a 3 at% Zrdoped ZnO active channel layer onto a transistor subassembly. These transistors exhibited n-type depletion mode in which threshold voltage and drain current on-to-off ratio were À18:0 V and 9:6 Â 10 5 , respectively.

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“…Epitaxial growth of SnO 2 using the SnI 4 /O 2 CVD process has not previously been reported. However, both polycrystalline films [21] and crystals [22] have been deposited using this precursor combination. Earlier studies of epitaxial SnO 2 thin films grown by atomic layer deposition (ALD) for gas sensing applications, [23] by the SnCl 4 /H 2 O 2 , [24] and SnI 4 /O 2 processes [25] have shown the power of the iodidebased process in producing high quality epitaxial films with enhanced sensitivity to CO compared to that of films deposited by the chloride process.…”

Section: Introductionmentioning

confidence: 99%

CVD of Epitaxial S_nO₂ Films by the SnI₄/O₂ Precursor Combination

Sundqvist

Ottosson

Hårsta³

2004

Chemical Vapor Deposition

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Thin films of SnO 2 have been successfully deposited by CVD using the SnI 4 /O 2 precursor combination. Depositions were carried out in the temperature range 350±700 C on a-Al 2 O 3 (012) substrates. The growth kinetics and conditions for epitaxial growth were investigated. From 350 C to 475 C, the growth rate was controlled by surface kinetics and increased exponentially from 5 nm h ±1 to 735 nm h ±1. Two different surface reactions are proposed, one at low temperatures involving SnI 4 , and one at high temperatures involving SnI 2 . Above 475 C the growth rate was controlled by mass transport of the tin-containing species. The epitaxial relationships were established to the in-plane orientation relationships, [010]

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A method for the deposition of transparent conducting thin films of tin oxide

Cited by 109 publications

References 16 publications

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

Optimization of Zr-Doped ZnO Thin Films Prepared by Sol-Gel Method

CVD of Epitaxial S_nO₂ Films by the SnI₄/O₂ Precursor Combination

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A method for the deposition of transparent conducting thin films of tin oxide

Cited by 109 publications

References 16 publications

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

Effects of Mg Additions on Microstructure and Optical Properties of Sol-Gel Derived ZnO Thin Films

Optimization of Zr-Doped ZnO Thin Films Prepared by Sol-Gel Method

CVD of Epitaxial SnO2 Films by the SnI4/O2 Precursor Combination

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CVD of Epitaxial S_nO₂ Films by the SnI₄/O₂ Precursor Combination