A method for temperature profile measurement of silicon wafers in high-temperature environments

Abstract

This paper describes the development of a method to characterize the temperature profile of silicon wafers in high-temperature environments. Monocrystalline wafers are implanted on one surface with B and P ions, which diffuse into the wafer at different rates based on the temperature-dependent diffusivity of the ions during a 30 min soak in the high-temperature environment between 1000 and 1400 °C. The use of two different dopant species, instead of one, yields higher sensitivity of the measured resistance to changes in temperature in this high-temperature range. The ρ-T relation is simulated using TSUPREM-4 and calibrated using a furnace of known temperature. The final sheet resistance varies spatially between 50 and 250 Ω/sq, and can be related to the temperature of each part of the wafer during the soak step, with a sensitivity of ∼0.5 Ω/°C, and a two-dimensional temperature map can be extracted. The method is demonstrated on wafers by characterizing the hot zone of a high-temperature furnace.

Numerical Simulation for Gas Supply Line Design in Manufacturing Process of Silicon Solar Cells Based on Steady State Fluid Dynamics

“…The incompressible flow assumption typically holds well even when dealing with a "compressible" fluid -such as air at room temperature -at low Mach numbers (even when flowing up to about Mach 0.3). Taking the incompressible flow assumption into account and assuming constant viscosity, the Navier-Stokes equations will read, in vector form: [6] (3) For steady-state-flow, equation ( 3) can be reduced to the following form: (4) Where ρ is the density of the fluid, p is pressure and µ is the viscosity and f is body force.…”