A method for measuring the shot noise in Schottky diodes with reduced barrier height

Alkeev, N. V.; Аверин, С. В.; Dorofeev, A. A.; Shashkin, V. I.

doi:10.1134/s1064226908020162

Cited by 1 publication

(5 citation statements)

References 6 publications

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“…Figure 1 demonstrates the block diagram of the setup for the measurement of shot noise. It is similar to the scheme of the setup for the noise measurement from [16], and the distinctive features are the presence of cryostat and spectrum analyzer (instead of the noise factor meter).…”

Section: Experimental Methodsmentioning

confidence: 97%

“…The power transferred from NG and TPN to the NPM is given by where G PIS and G AIS are the operating and available gains of the isolator, respectively, and q 3 = 1 is the power mismatch coefficient between the isolator and NPM. It can be demonstrated that G AIS = q 2 [16]. Power is also transferred from the isolator to NPM.…”

Section: Appendix Measurement Of the Gain And Noise Temperature Of Tmentioning

confidence: 94%

“…The holder with diode is fixed on the cooled copper plate in the helium cryostat. The noise measurements are performed at a fre quency of 200 MHz: on the one hand, we can neglect the 1/f noise and, on the other hand, we disregard the effect of the RTD intrinsic capacitance and the reac tivity of the wires that connect RTD and microstrip line on the measured results [16].…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Figure 2a demonstrates the corresponding equivalent circuit (EC) of RTD. Figure 2b shows the total EC of RTD at relatively low frequencies (when the RTD capacitance and inductances of connecting wires are neglected) [16]. We employ the following notation: r S , parasitic series resistance of RTD;…”

Section: (4)mentioning

confidence: 99%

“…Cable CAB1 and holder with RTD are input loaded on 50 Ω, so that G Ac1 = B and G Аh is given by the for mula [16] where y 0 is the inverse impedance of the 50 Ω line.…”

Section: (4)mentioning

confidence: 99%

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Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem

Alkeev¹,

Аверин²,

Dorofeev³

et al. 2012

J. Commun. Technol. Electron.

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A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y factor method that is mod ified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high speed resonance tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is ana lyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the tem peratures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs hetero system.

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Section: Experimental Methodsmentioning

confidence: 97%

Section: Appendix Measurement Of the Gain And Noise Temperature Of Tmentioning

confidence: 94%

Section: Experimental Methodsmentioning

confidence: 99%

Section: (4)mentioning

confidence: 99%

“…Cable CAB1 and holder with RTD are input loaded on 50 Ω, so that G Ac1 = B and G Аh is given by the for mula [16] where y 0 is the inverse impedance of the 50 Ω line.…”

Section: (4)mentioning

confidence: 99%

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