A method for measuring the lifetime of charge carriers in the base regions of high-speed diode structures

Togatov, V. V.; Gnatyuk, P. A.

doi:10.1134/1.1882802

Cited by 5 publications

(2 citation statements)

References 2 publications

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“…NCC lifetime was measured at the resulting structure using the method [19]. Lifetime in SC structures corresponds to the reverse conductance recovery time of p−n-transition, that was measured using decreasing vibrations of resonance LC-circuit, measurement error did not exceed 10%.…”

Section: Technology and Methods Of Studymentioning

confidence: 99%

Effect of nickel on the lifetime of charge carriers in silicon solar cells

et al. 2022

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It has been shown experimentally that nickel clusters on the surface of a silicon sample contain a large amount of oxygen and recombination impurities --- Cu, Fe, Cr, and so shows good gettering properties of clusters. The optimum temperature of nickel diffusion into silicon is determined as 800-850oC. Doping with impurity nickel atoms with the formation of clusters makes it possible to increase the lifetime of nonequilibrium charge carriers in the base of a solar cell by up to 2 times, while the formation of a nickel-enriched region in the face layer is more efficient. It is shown that the effect of additional doping with nickel weakly depends on the sequence of the processes of nickel diffusion and the creation of a working p-n-junction. Keywords: silicon solar cells, nickel diffusion, nonequilibrium charge carriers, gettering, p-n junction.

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Section: Technology and Methods Of Studymentioning

confidence: 99%

Effect of nickel on the lifetime of charge carriers in silicon solar cells

et al. 2022

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“…The lifetime of the nonequilibrium charge carriers -NCC(τ ) was measured in the obtained structures by the [16] technique. The lifetime in the photocell structures corresponds to the recovery time of the reverse conductivity of the p−n junction, which was measured using damped oscillations of the resonant LC-contour, the measurement error did not exceed 10%.…”

Section: Boron Diffusion Was Carried Out In Air Atmentioning

confidence: 99%

Gettering properties of nickel in silicon photocells

M.K.

Kenzhaev

et al. 2022

Technical Physics

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The effect of doping with nickel on the parameters of silicon photocells, in which the p-n- junction was created by impurities of III (B, Ga) and V (P, Sb) groups, has been studied. It is shown that the positive effect of nickel on the photocell efficiency does not depend on the type of initial silicon and on the nature of impurities used to obtain the p-n- junction, but is mainly determined by the gettering properties of the near-surface nickel-enriched layer Keywords: photocell, silicon, nickel, thermal annealing, clusters, lifetime, gettering, recombination centers.

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