1956
DOI: 10.1149/1.2430172
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A Metal-Semiconductor Capacitor

Abstract: A porous Ta/T~Oh/MnO2 capacitor is described. This capacitor, which might be termed a solid electrolytic capacitor, provides a higher capacitance per unit of volume than can be obtained with any other capacitor heretofore available. Its small size makes it extremely attractive for use in transistor circuits and in other low voltage circuits requiring the ultimate in miniaturization. Construction, characteristics, and advantages of the new electronic device are discussed.

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Cited by 41 publications
(18 citation statements)
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“…[1] and [2] shift to the left with a corresponding decrease in the concentration of conduction electrons. [1] and [2] shift to the left with a corresponding decrease in the concentration of conduction electrons.…”
Section: Heat-treatment In Airmentioning
confidence: 98%
“…[1] and [2] shift to the left with a corresponding decrease in the concentration of conduction electrons. [1] and [2] shift to the left with a corresponding decrease in the concentration of conduction electrons.…”
Section: Heat-treatment In Airmentioning
confidence: 98%
“…6). Both Taylor and Haring (14), and McLean and Power (18) have given slight indications of a lower temperature dependence of capacitance at low temperatures for Ta-Ta2Os-MnO2 capacitors. Below this temperature the entire oxide film thickness will act as an effective dielectric, and the change of capacitance with temperature will be determined solely by the temperature dependence of the dielectric constant.…”
Section: Oxide Films On Ta 1269mentioning
confidence: 98%
“…Since the first report that tantalum could be used for electrolytic capacitors [52], the growth of this application has been such that it now accounts for the highest consumption of the metal [53]. The capacitor consists of an anode of tantalum metal powder compressed into a pellet, typically 20 -200 mg.…”
Section: Tantalum Powder For Capacitorsmentioning
confidence: 99%