A Membrane Device for Substrate‐Free Photovoltaic Characterization of Quantum Dot Based p‐i‐n Solar Cells

Löper, P.; Stüwe, D.; Künle, M.; Bivour, Martin; Reichel, Christian; Neubauer, Rainer; Schnabel, Manuel; Hermle, Martin; Eibl, O.; Janz, S.; Zacharias, Margit; Glunz, Stefan W.

doi:10.1002/adma.201200539

Cited by 35 publications

(20 citation statements)

References 16 publications

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“…The observation that V oc,bot ≤ 580 mV, while mean V oc ≥ 900 mV for all passivated cells, indicates that the V oc of the top cell, V oc,top ≥ 320 mV, and may be as high as 400 mV. This is in agreement with a previous measurement of V oc = 370 mV made on a Si NC/SiC membrane cell [38] and shows that the top cell delivers a substantial portion of the tandem cell V oc . Passivation increases mean V oc of 3 nm tandem cells by 48 mV and thus plays an integral role in achieving high V oc in a Si NC cell.…”

Section: Open-circuit Voltagesupporting

confidence: 91%

“…The p+ Si/n+ SiC TRJs developed for these cells are sufficiently conductive to not restrict cell performance and were successfully integrated into the tandem cells. The resulting devices functioned as tandem cells, with mean V oc values of 900–950 mV exceeding those attainable from a single c‐Si or Si NC/SiC cell . Lifetime measurements showed that the bottom cell contributes less than 580 mV to V oc , indicating that the Si NC/SiC cell contributes more than 320 mV.…”

Section: Resultsmentioning

confidence: 98%

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Monolithic Si nanocrystal/crystalline Si tandem cells involving Si nanocrystals in SiC

Schnabel

Canino

Schillinger

et al. 2016

Progress in Photovoltaics

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Monolithic tandem cells involving a top cell with Si nanocrystals embedded in SiC (Si NC/SiC) and a c-Si bottom cell have been prepared. Scanning electron microscopy shows that the intended cell architecture is achieved and that it survives the 1100 °C anneal required to form Si NCs. The cells exhibit mean open-circuit voltages Voc of 900–950 mV, demonstrating tandem cell functionality, with ≤580 mV arising from the c-Si bottom cell and ≥320 mV arising from the Si NC/SiC top cell. The cells are successfully connected using a SiC/Si tunnelling recombination junction that results in very little voltage loss. The short-circuit current densities jsc are, at 0.8–0.9 mAcm−2, rather low and found to be limited by current collection in the top cell. However, equivalent circuit simulations demonstrate that in current-mismatched tandem cells such as the ones studied here, higher jsc, when accompanied by decreased Voc, can arise from shunts or breakdown in the limiting cell rather than improved current collection from the limiting cell. This indicates that Voc is a better optimisation parameter than jsc for tandem cells where the limiting cell exhibits poor junction characteristics. The high-temperature-stable cell architecture developed in this work, coupled with simulations highlighting potential pitfalls in tandem cell analysis, provides a suitable route for optimisation of Si NC layers for photovoltaics on a tandem cell device level

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Section: Open-circuit Voltagesupporting

confidence: 91%

Section: Resultsmentioning

confidence: 98%

Monolithic Si nanocrystal/crystalline Si tandem cells involving Si nanocrystals in SiC

Schnabel

Canino

Schillinger

et al. 2016

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Reduction of the layer thickness is expected to decrease the total resistivity of the layer, especially in the deeper low porosity part of the device which cannot behave as a widegap material. The devices performance presented here fall in the same range of value compare to other reported Si based nanodot devices produced through alternative method [29][30][31][32][33], except for the higher photovoltage reported in this study. All devices based on Si nanostructures appeared to suffer from the same high density of states present in the material.…”

Section: Photovoltaic Characterizationsupporting

confidence: 74%

Photovoltaic effect with high open circuit voltage observed in electrochemically prepared nanocrystalline silicon membranes

Mentek

Hippo

Gelloz

et al. 2014

Materials Science and Engineering: B

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“…This is a unique advantage for p-i-n heterostructures compared with p-n heterostructures. There are many previous reports to confirm the effectiveness of p-i-n architecture, such as ZnO-PbSe-CuI p-i-n solar cell30, Si QDs p-i-n solar cell31, Si nanowires-based p-i-n photodetector32, GaAs nanowire array solar cell with axial p-i-n junction33 and P3HT-blend-PCBM p-i-n thin film photoconductors34. Here in this paper, we use n-type ZnO micro/nanowire arrays as electron transport layer, FeS 2 nanocrystals (NCs) film as intrinsic light absorber layer and p-type CuI film as hole transport layer to form p-i-n heterostructure, and improving responsivity of FeS 2 photodiode are confirmed.…”

mentioning

confidence: 99%

Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

Yang

Wang

Shukla

et al. 2015

Sci Rep

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A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.

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A Membrane Device for Substrate‐Free Photovoltaic Characterization of Quantum Dot Based p‐i‐n Solar Cells

Cited by 35 publications

References 16 publications

Monolithic Si nanocrystal/crystalline Si tandem cells involving Si nanocrystals in SiC

Monolithic Si nanocrystal/crystalline Si tandem cells involving Si nanocrystals in SiC

Photovoltaic effect with high open circuit voltage observed in electrochemically prepared nanocrystalline silicon membranes

Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application

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