A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon

Srivastava, J. K.; Irene, E. A.

doi:10.1149/1.2113676

Cited by 36 publications

(16 citation statements)

References 6 publications

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“…This effect of the inert anneal is also confirmed by the present more extensive results. Recent studies (15) show that the oxidation rate is enhanced even after the dry inert ambient anneals. This is consistent with the above mentioned notion that the compressive stress relaxation itself increases the oxidant diffusivity and thus the overall oxidation.…”

Section: Methodsmentioning

confidence: 99%

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Intrinsic SiO2 film stress measurements on thermally oxidized Si

Kobeda¹,

Irene²

1987

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

111

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We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for SiO2 films formed on Si. This study includes stress measurements on four Si orientations: (100), (110), (111), and (311); at oxidation temperatures ranging from 700 to 1100 °C; wet (H2O) versus dry (O2) oxidations for (100) and (111) surfaces; and the effects of postoxidation annealing on stress. We find the following orientation dependence for intrinsic stress measured as a function of oxidation temperature: (110)≥(311)≥(100)>(111); a reduction in stress for wet versus dry studies; and an even larger reduction for postoxidation anneals. A recently proposed step model accounts for the differences in stress between the (111) and the remaining Si orientations. A number of Si oxidation models based on intrinsic stress are compared in their ability to describe observed kinetic behavior, and we conclude that within the Deal–Grove oxidation model, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.

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Section: Methodsmentioning

confidence: 99%

“…Since it was reported that high temperature annealing (15) and H 20 oxidation ambients (1,16) alter the oxidation kinetics,…”

Section: Introductionmentioning

confidence: 99%

Intrinsic SiO2 film stress measurements on thermally oxidized Si

Kobeda¹,

Irene²

1987

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

111

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show abstract

“…4,15 Previous studies have suggested that intrinsic stress suppresses the oxidation rate even for planar oxidation. In our experiment, while the measured stress of the as-grown SiO 2 film was 5.4ϫ10 9 dyne/cm 2 , it decreased to 4.1ϫ10 9 dyne/cm 2 after the Ar annealing.…”

Section: A Enhanced Oxidation Rate In Sequential Oxidationmentioning

confidence: 99%

“…This was first observed by Hamasaki, 13 and a number of studies have been reported on this effect. 4,14,15 Han et al have noted that the activation energy for the parabolic rate constant varies from 2.6 eV at 780°C to 0.9 eV at 1150°C from the several reported data. 3 The breaking point in an Arrhenius plot of the data appeared around 950°C which is in good agreement with the ''viscous flow point.''…”

Section: Introductionmentioning

confidence: 99%

“…Intrinsic oxide film stress is generated by molar expansion when Si is converted into SiO 2 during thermal oxidation and a number of studies reported the observation of intrinsic stress due to thermal oxidation of Si and influence of stress on thermal oxidation. [3][4][5][6][7][8][9][10][11][12] Kobeda et al reported the measured intrinsic stress value of oxide which reached a maximum value of ϳ4.5 ϫ10 9 dyne/cm 2 near the SiO 2 /Si interface. 9 Since stress in oxide is relaxed by viscous relaxation, it is released in high temperature oxidation and/or in high temperature annealing in inert ambient gas.…”

Section: Introductionmentioning

confidence: 99%

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