A Maximum Power Density Design Method for Nine Switches Matrix Converter Using SiC-MOSFET

Abstract

This paper presents a matrix converter design for achieving maximum power density using a SiC device based on a front loading design. To design the matrix converter to achieve maximum power density, the conduction loss and the switching loss of the matrix converter are theoretically derived and validated by simulation and experiment. Based on these formulas, the relationship between the efficiency and power density are revealed by using a Pareto-front curve in order to solve the trade-off problem between the power density and the efficiency. Moreover, in order to promote the widespread use of the matrix converter instead of a BTB system, it is quantitatively evaluated that the power density in the matrix converter is increased by 4.19 kW/dm 3 in comparison to the BTB system. Moreover, the power density of the matrix converter that uses a SiC-MOSFET (ROHM) as the switching device with natural air cooling is 95.0% (2.1 kW/dm 3 ) of the calculated maximum power density. Thus, the power density of the matrix converter is improved by 57.5% by the maximum power density design method. Based on the results, the design method for a high power density AC-AC direct converter is established according to the requisite specifications.Index Terms-Front loading design, loss analysis, matrix converter, maximum power density design, Pareto-front curve

Modulated Predictive Control for Indirect Matrix Converter

“…The best couple of adjacent switching states Ig and Id of the rectifier stage is selected in order to minimize gi as shown in (15), and then their duty cycles can be calculated using (17). From the control of the rectifier stage, the average DC-Link voltage required by the control of the inverter stage is also obtained:…”

“…For such reason when the IMC is designed for high switching frequencies, taking advantage of modern Silicon Carbide (SiC) MOSFETs [15], the input stage bidirectional switches can still be achieved using standard IGBT silicon devices requiring only 6 SiC MOSFETs for the output stage. On the contrary, in the case of DMC, all 18 switches have to be realized using SiC MOSFETs [13].…”

Design and Implementation of a Modular Bidirectional Switch Using SiC-MOSFET for Power Converter Applications

“…Semiconductors used to construct the power circuit in applications such as matrix converters include MOSFETs for low power and high switching frequency applications, semiconductors such as the gate deflection thyristor (GTO), the switching thyristor (IGCT), and MOS deviation thyristor (MTO) for higher power applications but with switching frequency limitations [10]. Nowadays the most used semiconductors in power converters are IGBTs, silicon Si-MOSFET, and silicon carbide SiC-MOSFETs [11][12][13][14], where the semiconductor with SiC technology takes advantage in relation to other technologies as Si-IGBT and RB-IGBTs in reference to power losses, dissipated temperature, and switching frequency operating high power and high switching frequencies [15,16]. The controllers of the power semiconductor gates are found in research papers formed by push-pull circuits coupled with a previous stage of isolation by means of optocouplers.…”

Preselection algorithm based on predictive control for direct matrix converter

“…The standard matrix converter (MC) [12] with nine bidirectional switches was first proposed by Gyugyi, L in 1970 [13]. The MC has no DC-link energy storage elements, which makes it more compact and potentially more reliable when compared with the back-to-back converter [14]. Due to these advantages it is expected that the MC can be applied in many ac-ac conversion applications, such as integrated motor drives, flexible ac transmission system, and wind energy conversion system [15][16][17].…”