A Materials Scientist's CANVAS: A System for Controlled Alteration of Nanomaterials in Vacuum Down to the Atomic Scale

Mangler, Clemens; Meyer, Jannik C.; Mittelberger, Andreas; Mustonen, Kimmo; Susi, Toma; Kotakoski, Jani

doi:10.1017/s1431927622011023

Cited by 8 publications

(3 citation statements)

References 9 publications

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“…From a personal point of view, and with the privilege of working in a laboratory that houses a unique interconnected ultra-high vacuum sample preparation and characterization apparatus, 145 our own work has been most severely affected by unwanted interactions. In most cases, knock-on damage competes with the desired non-damaging dynamics, but even more severely, the replacement of impurities in graphene with carbon has prevented us from creating larger patterns.…”

Section: Discussionmentioning

confidence: 99%

Identifying and manipulating single atoms with scanning transmission electron microscopy

Susi

2022

Chem. Commun.

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Section: Discussionmentioning

confidence: 99%

Identifying and manipulating single atoms with scanning transmission electron microscopy

Susi

2022

Chem. Commun.

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“…Between measurements, the sample was stored in the CANVAS ultra-high vacuum system. [51] Scanning Transmission Electron Microscopy and Analysis: STEM measurements were performed with an aberration-corrected Nion Ultra-STEM100 at primary beam energies ranging from 50 to 90 keV. Image series were recorded using a medium-angle annular dark field (MAADF) detector with a collection angle of 80-200 mrad.…”

Section: Methodsmentioning

confidence: 99%

Creation of Single Vacancies in hBN with Electron Irradiation

Bui

Leuthner

Madsen

et al. 2023

Small

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Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of 2D materials. The displacement cross sections of monolayer hexagonal boron nitride (hBN) are measured using aberration‐corrected scanning transmission electron microscopy in near ultra‐high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions, where chemical etching appears to dominate. Notably, it is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock‐on, even when accounting for the vibrations of the atoms. A theoretical description is developed to account for the lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modeled using charge‐constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect‐engineering of hBN at the level of single vacancies using electron irradiation.

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“…The graphene was not heated during deposition and the deposition was performed at a base pressure of 10 −10 mbar. After deposition, the samples were transported in the interconnected vacuum system [28] to the Nion UltraSTEM 100 scanning transmission electron microscopy (STEM) instrument operated here at 60 kV. The convergence semiangle was 30 mrad, and images were acquired with medium-and high-angle annular dark-field detectors (MAADF and HAADF, annular ranges of 60-200 mrad and 80-300 mrad, respectively).…”

Section: Methodsmentioning

confidence: 99%

Interface effects on titanium growth on graphene

Zagler,

Trentino,

Mustonen

et al. 2023

2D Mater.

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Poor quality interfaces between metal and graphene cause non-linearity and impair the carrier mobility in graphene devices. Here, we use aberration corrected scanning transmission electron microscopy to observe hexagonally close-packed Ti nano-islands grown on atomically clean graphene, and establish a 30◦ epitaxial relationship between the lattices. Due to the strong binding of Ti on graphene, at the limit of a monolayer, the Ti lattice constant is mediated by the graphene epitaxy, and compared to bulk Ti, is strained by ca. 3.7% to a value of 0.306(3) nm. The resulting interfacial strain is slightly greater than what has been predicted by density functional theory calculations.Our early growth stage investigations also reveal that, in contrast to widespread assumptions, Ti does not fully wet graphene but grows initially in islands with a thickness of 1-2 layers. Raman spectroscopy implies charge transfer between the Ti islands and graphene substrate.

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A Materials Scientist's CANVAS: A System for Controlled Alteration of Nanomaterials in Vacuum Down to the Atomic Scale

Cited by 8 publications

References 9 publications

Identifying and manipulating single atoms with scanning transmission electron microscopy

Identifying and manipulating single atoms with scanning transmission electron microscopy

Creation of Single Vacancies in hBN with Electron Irradiation

Interface effects on titanium growth on graphene

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