A mass transfer model for the autocatalytic dissolution of a rotating copper disc in oxygen saturated ammonia solutions

Zembura, Z.; Piotrowski, A.; Kolenda, Zygmunt

doi:10.1007/bf01076042

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…mass transfer studies by Zembura et al 22 The contribution to the diffusion in the x-direction is neglected because h << L. The slurry velocities u and v are taken from the lubrication model, and the boundary conditions for Eq. 14 are…”

Section: -D Lubrication Modelmentioning

confidence: 99%

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Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport

Sellamanickam

Thakurta

Schwendeman³

et al. 1999

J. Electrochem. Soc.

133

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The effects of the variation of chemical mechanical planarization (CMP) process parameters on slurry hydrodynamics and removal rate are studied using physically based models. The two models which are developed to describe and fundamentally understand the CMP process are (i) the lubrication model for slurry flow and (ii) the mass transport model for material removal. The mass transport model is developed for copper CMP. Conditions for stable operation and reduced wafer scratching are identified from the lubrication model. The mass transport model takes into account the chemical reaction at the wafer surface, the slurry flow hydrodynamics, and the presence of abrasive particles. The polish rates predicted by the model agree well with those measured experimentally.

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Section: -D Lubrication Modelmentioning

confidence: 99%

“…20 and 21, respectively. Using the scaled variables ϭ (h min Ϫ y)/(h min ⌬()) and ϭ x/L, where the dimensionless boundary layer thickness ⌬() is determined by solving [22]…”

Section: -D Lubrication Modelmentioning

confidence: 99%

Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport

Sellamanickam

Thakurta

Schwendeman³

et al. 1999

J. Electrochem. Soc.

133

View full text Add to dashboard Cite

show abstract

“…The presence of ammonia can also accelerate the oxidation of metallic copper (Eqs. 7.12 and 7.13) [44,45].…”

Section: Ammoniamentioning

confidence: 99%

Key Chemical Components in Metal CMP Slurries

Cheemalapati

Keleher

2007

Microelectronic Applications of Chemical Mechanical Planarization

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Chemical-mechanical planarization (CMP) slurries can be classified into two general categories according to their applications: metal CMP slurry and nonmetal CMP slurry. Two most important metals incorporated into IC chip manufacturing via CMP are W and Cu. Depending upon integration schemes, a metal CMP slurry may or may not carry out the function of removing the film(s) immediately below the overburden metal such as cap, adhesion, and barrier layers. For tungsten CMP, a single-step slurry is typically used to remove both excess tungsten and its barrier/adhesion layer. For copper CMP, after the removal of copper, a subsequent barrier removal step is often required. This chapter reviews the basic requirements for the key components found in common metal slurries.It is generally understood that a metal CMP slurry chemically modifies the surface to be polished and yields a softer and porous complex layer, which is then removed by mechanical force in the process. Although these metals may differ in their physical and chemical properties, the underlying principle for the design of slurries is the same. A production-worthy metal CMP slurry must address several issues, such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), step height reduction efficiency, dishing/erosion, minimum ILD loss, corrosion, scratching, slurry residue, and other surface defects. Typical metal CMP slurry may contain an oxidant, a chelating agent, abrasive particles, a surfactant, and other additives. These components must work in concert to produce adequate material removal rate, high planarization efficiency, and Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Electrochemical effects in the chemical-mechanical polishing of copper for integrated circuits

Sainio

Duquette

Steigerwald

et al. 1996

JEM

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A mass transfer model for the autocatalytic dissolution of a rotating copper disc in oxygen saturated ammonia solutions

Cited by 8 publications

References 4 publications

Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport

Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport

Key Chemical Components in Metal CMP Slurries

Electrochemical effects in the chemical-mechanical polishing of copper for integrated circuits

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