2017
DOI: 10.1038/nmat4970
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A map of high-mobility molecular semiconductors

Abstract: The charge mobility of molecular semiconductors is limited by the large fluctuation of intermolecular transfer integrals, often referred to as off-diagonal dynamic disorder, which causes transient localization of the carriers' eigenstates. Using a recently developed theoretical framework, we show here that the electronic structure of the molecular crystals determines its sensitivity to intermolecular fluctuations. We build a map of the transient localization lengths of high-mobility molecular semiconductors to… Show more

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Cited by 221 publications
(397 citation statements)
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“…Given that the charge transfer integral decreases exponentially with the π–π stacking distance, we show that greater lattice disorder leads to a higher mean charge transfer integral and faster charge transport in the π–π stacking direction. Although charge hopping models may not be applicable to high‐performance small molecules and polymers, for which the charge mobilities exceed 1 cm 2 V −1 s −1 with band‐like power‐law temperature dependences, our results nevertheless highlight the potential for thermal fluctuations in these systems to create strongly coupled regions that promote delocalization and result in high‐mobility pathways …”
mentioning
confidence: 77%
See 1 more Smart Citation
“…Given that the charge transfer integral decreases exponentially with the π–π stacking distance, we show that greater lattice disorder leads to a higher mean charge transfer integral and faster charge transport in the π–π stacking direction. Although charge hopping models may not be applicable to high‐performance small molecules and polymers, for which the charge mobilities exceed 1 cm 2 V −1 s −1 with band‐like power‐law temperature dependences, our results nevertheless highlight the potential for thermal fluctuations in these systems to create strongly coupled regions that promote delocalization and result in high‐mobility pathways …”
mentioning
confidence: 77%
“…Local order is critical to the performance of organic semiconductors. Conformational and configurational disorder can affect charge delocalization, and in turn lead to localized trap states in these materials . Although small conjugated molecules can be well‐ordered, many conjugated polymers exhibit significant disorder.…”
mentioning
confidence: 99%
“…The crucial point is that J ≈ λ in organic solids, highlighting the need to develop a theory for this crossover regime. Although not unique, a new model taking into account the key characteristics of molecular solids has been implemented in the recent years to describe the intermediate regime of charge transport present in molecular organic semiconductors, the transient localization scenario . In this model, the phonon modes (thermal lattice fluctuations) cause temporal variations in the transfer integrals and site energies across the molecular lattice .…”
Section: Charge Transportmentioning
confidence: 99%
“…On one hand, this change of paradigm in terms of fabrication of electronic circuits was evidently attractive. On the other hand, there was also considerable place for improvements of organic semiconductors thanks to quantum chemistry that helps the establishment of design rules and to synthetic chemistry that gives access to a nearly infinite number of molecular structures . The field of organic semiconductors for logic operations has witnessed an impressive development.…”
Section: Introductionmentioning
confidence: 99%
“…The charge transport in organic crystals cannot be adequately described by either purely bandlike/ coherent transport, nor by hopping transport. [138,139] [135,136] In contrast to amorphous semiconductor materials, in high-quality crystalline organic solids, the structural (static) disorder is small and the fluctuation of intermolecular transfer integrals (dynamic disorder) remains the factor that intrinsically limits the mobility.…”
Section: Mesoscalementioning
confidence: 99%