A Manufacturable 0.7μm Triple Metal Technology For High Density And High Performance ASIC Applications

Abstract

A high performance manufacturable 0.7pm triple metal technology has been developed on SGS-Thomson's HCMOS4 twin-well CMOS process. Improvements in metal processes to obtain reliable barrier layer and excellent step coverage make it possible to use A1 alloy in all three metal interconnects. Good reliabilities on device hot carrier degradation, metal electromigration and dielectric breakdown were achieved. The process has been succcssful in fabricating a gate array product with greater than 30% yield for 220Kmi12 die size.