A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1−<i>x</i>Sb<i>x</i> alloys

Tang, P. J. P.; Pullin, M. J.; Li, Y B; Phillips, C. C.; Stradling, R. A.; Chung, Sunjae; Yuen, Peter W. T.; Hart, L.; Bain, Dipankar; Galbraith, I.

doi:10.1063/1.117720

Cited by 16 publications

(5 citation statements)

References 6 publications

(7 reference statements)

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“…Agreement is good for all four wells, e.g., ϭ0.0179/0.0248m 0 for the 318/53-Åwells, respectively, compared with the experimental values of ϭ0.015/0.023Ϯ0.001m 0 , using the band parameters of Table I and a fractional offset Q c ϭ2.27, remarkably consistent with the value we determine from our magnetotransmission data. A similar conclusion is reached with our own experiments on a multiwell sample, 24 where the type-IIB alignment could not fit the magnetophotoluminescence.…”

Section: Resultssupporting

confidence: 87%

Band alignments and offsets in In(As,Sb)/InAs superlattices

Bain

Hart

et al. 1997

Phys. Rev. B

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The band alignments and band offsets were investigated for In͑As,Sb͒/InAs superlattices of various periods and compositions. Magnetoabsorption experiments allowed identification of subband energies and in-plane reduced masses. Using an 8ϫ8 k•p band-structure calculation which takes account of nonparabolicity, valence subband mixing, and strain effects, we are able to fit calculated absorption curves to transition energies and reduced masses. Comparison of fits on several samples confirm that the electrons lie in the In͑As,Sb͒ layer and the holes in the InAs layer. By using the fitted curve offsets, we are able to calculate the fractional conduction-band-offset parameter, Q c , which for a type-II heterostructure can be greater than 1 and which we found to be 2.

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Section: Resultssupporting

confidence: 87%

Band alignments and offsets in In(As,Sb)/InAs superlattices

Bain

Hart

et al. 1997

Phys. Rev. B

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“…The discrepancy between the calculated bandgap and the measured PL transition energy is due to the type II band alignment, as predicted by theory 17 and experimentally confirmed. 16,20,24 For the simulations, the software nextnano 3 (Ref. 25) was used, and rectangular quantum wells with periodic boundary conditions were assumed for the MQW samples.…”

Section: A Photoluminescence Resultsmentioning

confidence: 99%

“…Various conflicting reports of the band lineups have been reported, including type I, 15 type IIa (Ref. 16) (electrons in the InAsSb layers), and type IIb (Ref. 17) (electrons in the InAs layers).…”

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confidence: 96%

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

David

Steger

Thewalt

et al. 2012

Journal of Applied Physics

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InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally, the initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector with a 40 nm period are shown. Its cutoff wavelength is 0.15 eV (8.5 μm), in good agreement with the predicted type II transition energy of 0.17 eV.

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“…Figure 8 shows three possible band alignments between InAs and InAs 1−x Sb x including two type-II band alignments: with the InAs CB higher in energy than the InAsSb CB and with the InAsSb CB higher in energy than the InAs CB. From these two papers [ 20 , 58 ], the following conclusions could be drawn: the type-I alignment is notified for SLs with low Sb compositions and ordering typical for the InAs1-xSbx layer, which is characterized by a lower alloy bandgap than that of a random alloy with equal composition x [ 59 ], the type-IIa alignment is based on argued conclusions for the reduced mass values of the lowest two transitions given by PL and magneto-transmission measurement results [ 60 , 61 ], type-IIb, is chosen for InAs/InAs0.93Sb0.07 SLs on InAs substrates [ 62 ]. …”

Section: Inassb Alloy Propertiesmentioning

confidence: 99%

“…the type-IIa alignment is based on argued conclusions for the reduced mass values of the lowest two transitions given by PL and magneto-transmission measurement results [ 60 , 61 ],…”

Section: Inassb Alloy Propertiesmentioning

confidence: 99%

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1−xSbx alloys

Cited by 16 publications

References 6 publications

Band alignments and offsets in In(As,Sb)/InAs superlattices

Band alignments and offsets in In(As,Sb)/InAs superlattices

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

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