A Magnetic Field-to-Digital Converter Employing a Spin-Torque Nano-Oscillator

Albertsson, Dagur Ingi; Åkerman, Johan; Rusu, Ana

doi:10.1109/tnano.2020.3007344

Cited by 7 publications

(2 citation statements)

References 31 publications

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“…These nanoscale nonlinear oscillators are capable of generating various magnetodynamic modes, such as propagating spin-waves, − localized bullets, , magnetic droplets, − dynamic vortex, , and dynamic skyrmions . During the past decades, tremendous attention has been paid to their applications in, for instance, signal generators, spectrum analyzers, , spin diodes, − wireless communication, − microwave-assisted magnetic random-access memories, , Ising machines, and neuromorphic computing, − due to their capability of generating highly tunable ultrawide microwave signals ranging from hundreds of megahertz to tens of gigahertz …”

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confidence: 99%

Field-Free High-Frequency Exchange-Spring Spin-Torque Nano-Oscillators

Jiang

Chung

et al. 2023

Nano Lett.

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Spin-torque nano-oscillators (STNOs) are a type of nanoscale microwave auto-oscillators utilizing spin-torque to generate magnetodynamics with great promise for applications in microwaves, magnetic memory, and neuromorphic computing. Here, we report the first demonstration of exchange-spring STNOs, with an exchange-spring ([Co/Pd]-Co) reference layer and a perpendicular ([Co/Ni]) free layer. This magnetic configuration results in high-frequency (>10 GHz) microwave emission at a zero magnetic field and exchange-spring dynamics in the reference layer and the observation of magnetic droplet solitons in the free layer at different current polarities. Our demonstration of bipolar and field-free exchange-spring-based STNOs operating over a 20 GHz frequency range greatly extends the design freedom and functionality of the current STNO technology for energy-efficient high-frequency spintronic and neuromorphic applications.

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confidence: 99%

Field-Free High-Frequency Exchange-Spring Spin-Torque Nano-Oscillators

Jiang

Chung

et al. 2023

Nano Lett.

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“…3,12 In addition to the aforementioned sensors, the oscillations of nanoscale magnetization driven by the spintransfer torque 13 from spin-polarized current in an electrical device (a spin-torque nano-oscillator, STNO) have been proposed as a nanoscale sensing candidate. 1,[14][15][16] However, the quantification of the sensor detectivity in such devices is lacking.…”

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confidence: 99%

Nanoscale magnetic field sensing with spin-Hall nano-oscillator devices

Xie¹,

Cheung²,

Fuchs³

2023

Preprint

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Comprehensive electrical characterization and theoretical analysis of Mn and As doped β-FeSi2 through DFT: A promise to rectification and photovoltaic applications

Sen

Acharya

Guha

et al. 2023

Journal of Applied Physics

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The effects of Mn and As doping in β-FeSi2 have been studied by theoretical simulations and electrical characterizations by analyzing Hall parameters within the temperature range of 20–300 K using mobility and the dual band model. The Hall resistivity ρ of doped samples increases linearly from a negative to a positive magnetic field (B), demonstrating the normal Hall effect at room temperature. High temperature Hall concentration increases significantly with the gradual increase in both Mn and As doping due to more and more ionization of the deep donor level. High temperature activation energies of Mn doped β-FeSi2 are considerably greater than that of low temperature energies, which demonstrates clear evidence of the dual band model. From density functional theory calculations, the origin of the dual band model has been validated from the electronic structure of β-FeSi2. Both density of states and charge transfer to the system upon doping have been investigated through the density functional theory, which demonstrates the Mn and As doped systems to be p-type and n-type, respectively. Both Mn and As doped β-FeSi2 exhibit p-type and n-type conductivities for spin down and spin up channels, respectively, in the presence of an external magnetic field, which will encourage its applications in novel spintronic devices. In addition, a β-FeSi2 based homo-junction diode fabricated from the Mn and As doped β-FeSi2 exhibits a cut-in voltage of 0.82 V, a reverse breakdown voltage of −10 V, and an ideality factor of 3.87. Thus, doped β-FeSi2 will be very much useful for fabricating an efficient and cost-effective solar cell if fabricated physically.

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A Magnetic Field-to-Digital Converter Employing a Spin-Torque Nano-Oscillator

Cited by 7 publications

References 31 publications

Field-Free High-Frequency Exchange-Spring Spin-Torque Nano-Oscillators

Field-Free High-Frequency Exchange-Spring Spin-Torque Nano-Oscillators

Nanoscale magnetic field sensing with spin-Hall nano-oscillator devices

Comprehensive electrical characterization and theoretical analysis of Mn and As doped β-FeSi2 through DFT: A promise to rectification and photovoltaic applications

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