A macro model in SMART SPICE to study MOSFET degradations with the CP technique

Djahli, F.; Kaabi, L.

doi:10.1016/s0026-2692(97)00022-0

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…Partial research on the basic DC characteristics modeling of MOSFETs is conducted. [6][7][8][9][10] In Biber et al, 11 a nonlinear microwave MOSFET model for spice simulators based on S-parameter measurements over a large bias range is presented. In Gao et al, 12 a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail-span collapse.…”

Section: Introductionmentioning

confidence: 99%

“…Some researchers have focused on the basic characteristics and some special effects of MOSFETs and carried out targeted modeling research. Partial research on the basic DC characteristics modeling of MOSFETs is conducted 6–10 . In Biber et al, 11 a nonlinear microwave MOSFET model for spice simulators based on S‐parameter measurements over a large bias range is presented.…”

Section: Introductionmentioning

confidence: 99%

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A MOSFET EMC modeling method based on electrical characteristic measurement and simplex optimization and particle swarm optimization

Pan,

Liu,

Ren

et al. 2023

Circuit Theory & Apps

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SummaryMetal oxide semiconductor field effect transistors (MOSFETs) are widely used in various power electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for MOSFETs is crucial for EMC analysis of these systems, especially high‐frequency switching circuits. In this paper, a MOSFET EMC modeling method is proposed based on electrical characteristic measurement, simplex optimization, and particle swarm optimization (PSO), to make MOSFET models meet both functionality and EMC analysis requirements. First, systematic methods for extracting SPICE parameters based on physical MOSFETs are presented, including a proposed curve‐fitting method based on PSO for extracting the CDS‐VDS and ID‐VGS characteristic parameters. Second, parametric influence analyses are conducted on some important model parameters, and the law that these parameters affect the EMC of MOSFETs is obtained. Finally, the preliminary MOSFET model was optimized comprehensively using the simplex method. The measured and simulated results are in good agreement in both time domain and frequency domain. It proves that the established model meets the requirements for model accuracy in terms of both EMC and functionality. Therefore, the proposed EMC modeling method is feasible.

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