A Low-Voltage Si-Ge Avalanche Photodiode for High-Speed and Energy Efficient Silicon Photonic Links

Wang, Binhao; Huang, Zhihong; Sorin, Wayne V.; Zeng, Xiaoge; Liang, Di; Fiorentino, Marco; Beausoleil, Raymond G.

doi:10.1109/jlt.2019.2963292

Cited by 47 publications

(28 citation statements)

References 16 publications

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“…Ge-on-Si avalanche photodiodes (APDs) also attracted considerable attention for high-sensitivity receivers [92][93][94][95][96][97]. Compared to PIN diodes, APDs usually have lower bandwidths and require more complex driving circuits, making them less popular for high-speed coherent detection.…”

Section: Ge-on-si Photodetectors and Coherent Receiversmentioning

confidence: 99%

“…Separate absorption, charge, and multiplication (SACM) structures have been explored in both vertical [92,93] and lateral junctions [94,96]. A vertical junction SACM-APD achieved a gain-bandwidth product of 276 GHz with a bandwidth of 23 GHz [93]; the device shows more than 3 dB improvement in sensitivity at 100 Gb/s PAM-4 [97]. An ultrahigh gainbandwidth product exceeding 430 GHz was achieved using a lateral junction SACM structure; however, its bandwidth is less than 10 GHz, limited by the carrier drift time in the multiplication region [94].…”

Section: Ge-on-si Photodetectors and Coherent Receiversmentioning

confidence: 99%

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Scaling capacity of fiber-optic transmission systems via silicon photonics

2020

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The tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.

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Section: Ge-on-si Photodetectors and Coherent Receiversmentioning

confidence: 99%

Section: Ge-on-si Photodetectors and Coherent Receiversmentioning

confidence: 99%

Scaling capacity of fiber-optic transmission systems via silicon photonics

2020

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“…SACM APDs advantageously combine the high absorption in Ge and the low multiplication noise of Si, yielding another degree of flexibility to engineer device performances. Most of the SACM structures use vertical diode architectures [154,156,159,[161][162][163][164][165][166]174] instead of lateral ones [172,176]. However, the vertical diode scheme calls upon more process steps, with dedicated epitaxy and metal contacting on Ge, which may degrade the overall performances.…”

Section: Referencementioning

confidence: 99%

“…However, the vertical diode scheme calls upon more process steps, with dedicated epitaxy and metal contacting on Ge, which may degrade the overall performances. Moreover, typical SACM APDs use a single voltage to control electric fields in those, by design, separated regions [161][162][163][164]. This, in turn, calls upon delicate charge layer optimization, i.e.…”

Section: Referencementioning

confidence: 99%

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Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

et al. 2020

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Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

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The Intelligent Design of Silicon Photonic Devices

Li,

Zhou,

Qiu

et al. 2024

Advanced Optical Materials

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Photonic devices based on silicon waveguides are essential to versatile high‐performance and low‐cost photonic integrated systems. Extremely complex silicon photonic devices with hundreds or even thousands of degrees of freedom (DOF) are successfully designed and manufactured based on recent advances in data science and nanofabrication technology. At this level, conventional forward‐reasoning may no longer be suitable for designing high‐performance silicon photonic devices with novel functionalities since the light‐matter interaction is complex and non‐intuitive. Therefore, the timely development of sub‐wavelength silicon photonic devices that can precisely mold the flow of light is a critical and urgent issue requiring joint engineering and scientific efforts. In this paper, an inverse design strategy based on heuristic and gradient descendant algorithms, enabling the realization of large‐scale integrated devices is first introduced. Subsequently, the burgeoning deep learning technology, which offers a promising direction for the automation design of silicon photonics with a data‐driven approach, is discussed. Finally, the obstacles and prospects in this emerging research direction are revealed. Detail discussions from multiple perspectives are provided. This review aims to provide general guidance and a comprehensive reference for scientists developing photonic integrated systems.

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A Low-Voltage Si-Ge Avalanche Photodiode for High-Speed and Energy Efficient Silicon Photonic Links

Cited by 47 publications

References 16 publications

Scaling capacity of fiber-optic transmission systems via silicon photonics

Scaling capacity of fiber-optic transmission systems via silicon photonics

Silicon–germanium receivers for short-wave-infrared optoelectronics and communications

The Intelligent Design of Silicon Photonic Devices

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