A Low-Power Push-Push D-Band VCO with 11.6% FTR utilizing Back-gate Control in 22nm FDSOI

Abstract

This paper proposes a D-band push-push voltage controlled oscillator implemented using 22nm FDSOI CMOS technology. The back-gate controls are employed to achieve a wide frequency tuning range (FTR) and low power consumption. Inductive coupling with the dummy fill blocks are optimized to improve the resonator quality factor. The measured results demonstrate a wide tuning range of 11.6% from 138-155.1 GHz with a supply voltage of 0.9 V. The output power of the VCO is -16 dBm at a center frequency of 146.6 GHz with a phase noise of -90.1 dBc/Hz at 10 MHz offset. The VCO consumes a low power of 12.2 mW with a compact area of 259x249 µm 2 . The corresponding F OMT is -163.9 dBc/Hz.