A Low-Power 2.4 GHz CMOS RF Front-End with Temperature Compensation

Abstract

In this paper, we proposed an ultra-low power low noise amplifier(LNA) using a TSMC 0.18 μm RF CMOS process. To satisfy the low power consumption with high gain, a current-reused technique is utilized. In addition, a low bias voltage in the subthreshold region is utilized to achieve ultra low power characteristic. The designed LNA has the voltage gain of 13.8 dB and noise figure(NF) of 3.4 dB at 2.4 GHz. The total power consumption of the designed LNA is only 0.63 mW from 0.9 V supply voltage and chip occupies 1.1 mm×0.8 mm area.

A 2.4 GHz CMOS diversity receiver having a soft‐start regulator for wake‐up

“…The gain is programmable between 25 dB and 11 dB. The NF is 1.5 dB in the high-gain mode [6]. To reduce the switches loss, the width of transistors is chosen large enough but the chip area is minimized using the compact stacked inductor.…”