A low noise, high resolution silicon temperature sensor

Szajda, Kenneth S.; Sodini, C.G.; Bowman, H. F.

doi:10.1109/4.535415

Cited by 44 publications

(9 citation statements)

References 5 publications

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“…Lateral NPN transistors in CMOS technology have been used in temperature sensors [18] but their I C −V be characteristic deviates from (5) due to various extra non-idealities [16]. A better option is the vertical NPN [19], [20], which consists of an n+ drain diffusion (emitter), a p-well (base) and a deep n-well (collector), all standard features in deep-submicron processes [ Fig. 2(b)].…”

Section: A Non-idealities Of Bipolar Transistorsmentioning

confidence: 99%

A 1.2-V 10-$\mu$W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 $^{\circ}$C (3$\sigma$) From $-$70 $^{\circ}$C to 125 $^{\circ}$C

Foti

Breems

Makinwa

et al. 2010

IEEE J. Solid-State Circuits

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An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 • C (3σ) and a trimmed inaccuracy of ±0.2 • C (3σ) over the temperature range from −70 • C to 125 • C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 µA from a 1.2-V supply and occupies an area of 0.1 mm 2. I. INTRODUCTION Temperature sensors are used in a wide range of commercial applications, ranging from the control of domestic appliances and industrial machinery to environmental monitoring. Fabrication costs can be reduced by implementing the sensors in standard digital CMOS processes. This enables the co-integration of the read-out electronics, so that a digital temperature reading can be directly provided to, for instance, a microcontroller. This work is funded by the European Commission in the Marie Curie project TRANDSSAT-2005-020461.

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Section: A Non-idealities Of Bipolar Transistorsmentioning

confidence: 99%

A 1.2-V 10-$\mu$W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 $^{\circ}$C (3$\sigma$) From $-$70 $^{\circ}$C to 125 $^{\circ}$C

Foti

Breems

Makinwa

et al. 2010

IEEE J. Solid-State Circuits

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“…The advantages of using sensors for these applications lies in easy and quick monitoring of the ambiance conditions where it is difficult for a person to reach. Earlier, during the use of silicon sensors for these applications [4][5][6], certain advantages like quick response, high sensitivity and durability of the sensors were highlighted. But certain disadvantages like high cost of fabrication, high input power and minimized chances to be operated at extreme conditions led the researchers to opt for alternative options.…”

Section: Introductionmentioning

confidence: 99%

pH Sensing of Printed Flexible Sensors

Nag

Dorsum

Mukhopadhyay

et al. 2018

2018 12th International Conference on Sensing Technology (ICST)

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This paper presents the fabrication and implementation of some of the printed flexible sensors develop with laser cutting technique. Different types of elastomeric and conductive materials were used to fabricate the electrodes and substrates of the sensor prototypes. The developed prototypes were then used as pH sensors to determine their behavior over a range of pH values at the acidic and basic spectrum. The behavior of these prototypes proved their potential to be used for electrochemical sensing in different health and environmental applications.

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“…, often times depend on the ambient temperature and require simultaneous temperature measurement to improve their accuracy. There are many different types of commercially available temperature sensors [1,2], among them the most popular temperature sensors include thermocouples [3–5], resistive temperature detectors (RTD) [6,7], thermistors [8,9] and semiconductor temperature sensors [10–12]. Non-contact temperature measurement can be achieved using infra-red thermometers or pyrometers [13].…”

Section: Introductionmentioning

confidence: 99%

A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

Yang

2013

Sensors

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In this article, an extreme environment-capable temperature sensing system based on state-of-art silicon carbide (SiC) wireless electronics is presented. In conjunction with a Pt-Pb thermocouple, the SiC wireless sensor suite is operable at 450 °C while under centrifugal load greater than 1,000 g. This SiC wireless temperature sensing system is designed to be non-intrusively embedded inside the gas turbine generators, acquiring the temperature information of critical components such as turbine blades, and wirelessly transmitting the information to the receiver located outside the turbine engine. A prototype system was developed and verified up to 450 °C through high temperature lab testing. The combination of the extreme temperature SiC wireless telemetry technology and integrated harsh environment sensors will allow for condition-based in-situ maintenance of power generators and aircraft turbines in field operation, and can be applied in many other industries requiring extreme environment monitoring and maintenance.

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A low noise, high resolution silicon temperature sensor

Cited by 44 publications

References 5 publications

A 1.2-V 10-$\mu$W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 $^{\circ}$C (3$\sigma$) From $-$70 $^{\circ}$C to 125 $^{\circ}$C

A 1.2-V 10-$\mu$W NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 $^{\circ}$C (3$\sigma$) From $-$70 $^{\circ}$C to 125 $^{\circ}$C

pH Sensing of Printed Flexible Sensors

A Silicon Carbide Wireless Temperature Sensing System for High Temperature Applications

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