A Low-Noise CMOS SPAD Pixel With 12.1 Ps SPTR and 3 Ns Dead Time

Gramuglia, Francesco; Wu, Ming-Lo; Bruschini, Claudio; Lee, Myoung-Jae; Charbon, Edoardo

doi:10.1109/jstqe.2021.3088216

Cited by 47 publications

(32 citation statements)

References 43 publications

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“…4 (b) the decay time constant of the exponential tail again as a function of reverse bias voltage. These results show an improvement of almost 40% with respect to what reported in [20], where the output was directly taken from the packaged die with high impedance 4 GHz active probes. The mean free path of a MIP in silicon is on the order of hundreds of nanometers.…”

Section: Optical Device Characterizationmentioning

confidence: 47%

“…In order to analyze the performance of our system, we started from an optical characterization using the setup in FIG. 3 [20,21]. The test bench is composed of a femtosecond pulsed laser used as the controlled light source, making the pulse length contribution to the measured timing jitter negligible.…”

Section: Optical Device Characterizationmentioning

confidence: 99%

“…A comprehensive theoretical study of timing performance in SPADs when used FIG. 1: Micrograph of the implemented chip embedding 25 µm diameter SPADs with integrated pixel circuit [20]. in MIP detection is presented in [12].…”

Section: Introduction a High Timing Resolution With Silicon Pixel Det...mentioning

confidence: 99%

“…2, is implemented in close proximity to each SPAD. The circuit is designed to enable a tunable dead time, as short as 3 ns, supporting very high count rates while still maintaining very low afterpulsing [20].…”

Section: Introduction a High Timing Resolution With Silicon Pixel Det...mentioning

confidence: 99%

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Sub-10 ps Minimum Ionizing Particle Detection with Geiger-Mode APDs

Gramuglia¹,

Ripiccini²,

Fenoglio³

et al. 2021

Preprint

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Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of stateof-the-art Geiger-mode APDs, also known as single-photon avalanche diodes (SPADs), for the detection of minimum ionizing particles (MIPs) with best-in-class timing resolution. The SPADs were implemented in standard CMOS technology and integrated with on-chip quenching and recharge circuitry. Two devices in coincidence allowed to measure the time-of-flight of 180 GeV/c momentum pions with a coincidence time resolution of 22 ps FWHM (9.5 ps Gaussian sigma). Radiation hardness measurements, also presented here, highlight the suitability of this family of devices for a wide range of high energy physics (HEP) applications.

show abstract

Section: Optical Device Characterizationmentioning

confidence: 47%

Section: Optical Device Characterizationmentioning

confidence: 99%

Section: Introduction a High Timing Resolution With Silicon Pixel Det...mentioning

confidence: 99%

Section: Introduction a High Timing Resolution With Silicon Pixel Det...mentioning

confidence: 99%

See 2 more Smart Citations

Sub-10 ps Minimum Ionizing Particle Detection with Geiger-Mode APDs

Gramuglia¹,

Ripiccini²,

Fenoglio³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…It is worth mentioning that jitter measurements using a focused beam instead of wide-area illumination can cause a better estimation of the jitter due to eliminated lateral diffusion as reported here [13]. On the other hand, employing a good sensing circuit with a low threshold and reduced parasitic capacitance may enhance jitter performance [31], [32].…”

Section: E Timing Jittermentioning

confidence: 84%

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Kizilkan

Karaca

Pešic

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 µm diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300K and 225K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/µm 2 and it decreases to 5 cps/µm 2 at 225K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR).

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Time Resolution and Efficiency of Single-Photon Avalanche Diodes

Windischhofer

2023

Physics for Particle Detectors and Particle Detectors for Physics

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A Low-Noise CMOS SPAD Pixel With 12.1 Ps SPTR and 3 Ns Dead Time

Cited by 47 publications

References 43 publications

Sub-10 ps Minimum Ionizing Particle Detection with Geiger-Mode APDs

Sub-10 ps Minimum Ionizing Particle Detection with Geiger-Mode APDs

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Time Resolution and Efficiency of Single-Photon Avalanche Diodes

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