A low noise and low loss power MOSFET with low Vth regions for voltage regulators

Masunaga, Masahiro; Hashimoto, Takayuki; Kato, Katsuji; Andou, Hiroki; Numabe, Hideo; Tomizawa, Zen; Matsuura, N.

doi:10.1109/ispsd.2013.6694404

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…Because the method used to drive the SiC MOSFET is simple and its dynamic losses are low in the power conversion (Hazra et al, 2016) (Masunaga et al, 2013)(Oswald et al, 2014.…”

Section: Sic Mosfetsmentioning

confidence: 99%

An 8kW LLC resonant converter in plasma power supply based on SiC power devices for efficiency improvement

Wang

Fan

Xie

et al. 2019

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Purpose This paper aims to present an 8 kW LLC resonant converter designed for plasma power supply with higher efficiency and lighter structure. It presents how to solve the problems of large volume and weight, low performance and low efficiency of traditional plasma power supply. Design/methodology/approach At present, conventional silicon (Si) power devices’ switching performance is close to the theoretical limit determined by its material properties; the next-generation silicon carbide (SiC) power devices with outstanding advantages can be used to optimal design. This 8 kW LLC resonant converter prototype with silicon carbide (SiC) power devices with a modulated switching frequency ranges from 100 to 400 kHz. Findings The experimental results show that the topology, switching loss, rectifier loss, transformer loss and drive circuit of the full-bridge LLC silicon carbide (SiC) plasma power supply can be optimized. Research limitations/implications Due to the selected research object (plasma power supply), this study may have limited universality. The authors encourage the study of high frequency resonant converters for other applications such as argon arc welding. Practical implications This study provides a practical application for users to improve the quality of plasma welding. Originality/value The experimental results show that the full-bridge LLC silicon carbide (SiC) plasma power supply is preferred in operation under conditions of high frequency and high voltage. And its efficiency can reach 98%, making it lighter, more compact and more efficient than previous designs.

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“…Because the method used to drive the SiC MOSFET is simple and its dynamic losses are low in the power conversion (Hazra et al, 2016) (Masunaga et al, 2013)(Oswald et al, 2014.…”

Section: Sic Mosfetsmentioning

confidence: 99%

An 8kW LLC resonant converter in plasma power supply based on SiC power devices for efficiency improvement

Wang

Fan

Xie

et al. 2019

View full text Add to dashboard Cite

show abstract

Low Reverse Recovery Charge 30 V Power MOSFET With Double Epi Structure for DC–DC Converters

Hirao

Hashimoto

2016

IEEE Trans. Electron Devices

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A low noise and low loss power MOSFET with low Vth regions for voltage regulators

Cited by 2 publications

References 7 publications

An 8kW LLC resonant converter in plasma power supply based on SiC power devices for efficiency improvement

An 8kW LLC resonant converter in plasma power supply based on SiC power devices for efficiency improvement

Low Reverse Recovery Charge 30 V Power MOSFET With Double Epi Structure for DC–DC Converters

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