A low-loss V-groove coplanar waveguide on an SOI substrate

Zhao, Yuhang; Tong, Jiarong; Zeng, Xuan; Wang, Yong

doi:10.1088/1674-4926/30/7/074004

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…They observe that the insertion losses can be reduced from >2 dB mm -1 to ~1 dB mm -1 . The findings here suggest that the reduced losses observed by Yuhang et al [44] have, at least in part, their origin at interfaces between the tracks. Finally, in terms of losses associated with a buried layer, Neve et al [45] showed that a buried trap-rich layer could reduce losses of CPW on silicon having a resistivity in the range 2-5 kΩ cm.…”

Section: Comparisons Of Results With Measurements On Comparable Cpwsupporting

confidence: 64%

“…They found that CPW on a thermal oxide (SiO 2 ) on high-resistivity (>5000 Ω cm) silicon was more sensitive to DC biasing and its polarity than MS-implying that buried interface charges (and their absorption) underneath tracks were at the origin of a significant proportion of the losses in this system. Yuhang et al [45] proposed lower-loss a 'V-groove' CPW based on SOI wafers. Using CPW having a signal-to-ground gap width of 30 µm.…”

Section: Comparisons Of Results With Measurements On Comparable Cpwmentioning

confidence: 99%

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Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Marzouk¹,

Avramovic²,

Arscott³

2020

J. Phys. D: Appl. Phys.

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Attenuation has been studied in different-sized coplanar waveguide (CPW) patterned onto silicon-oninsulator (SOI) for three different surfaces between the CPW tracks: silicon dioxide/silicon interface, a hydrogen-terminated silicon surface, and a native oxide. For large-gap CPW (signal track width = 100 µm, gap width = 63.5 µm), selective removal of the silicon dioxide from between the metal tracks reduces losses from 0.79 dB mm -1 to 0.69 dB mm -1 at 50 GHz. The subsequent growth of a native oxide on the silicon surface between the tracks results in losses equal to 0.67 dB mm -1 . For small-gap CPW ( = 2 µm, = 2.5 µm), losses are reduced from 5.6 dB mm -1 to 3.4 dB mm -1 at 50 GHz by selectively removing the silicon oxide between the metal tracks. However, when a native oxide is allowed to grow on the silicon surface between the tracks, the losses increase significantly to 5.8 dB mm -1 . When the native oxide is removed, the losses decrease to those observed following removal of the silicon dioxide. The measurements suggest that the contribution of the intertrack surface losses is the result of free-carrier losses due to a surface inversion layer. The surface-associated losses are proportionally larger as the CPW dimensions shrink-as predicted by modelling. We suggest that technologies employing miniature CPW should take this into account. The native oxide should be routinely removed if possible-implying that 2 appropriate chemically-resistant metallisation be chosen, or fabrication processes should incorporate stable passivation of silicon surfaces between CPW tracks to avoid native oxide growth. Conversely, the increased sensitivity of attenuation to surface effects by shrinking CPW dimensions suggests that CPWbased sensors could benefit from miniaturization.

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Section: Comparisons Of Results With Measurements On Comparable Cpwsupporting

confidence: 64%

Section: Comparisons Of Results With Measurements On Comparable Cpwmentioning

confidence: 99%

Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Marzouk¹,

Avramovic²,

Arscott³

2020

J. Phys. D: Appl. Phys.

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Passivation of miniature microwave coplanar waveguides using a thin film fluoropolymer electret

Marzouk

Avramovic

Guérin

et al. 2021

Sci Rep

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The insertion losses of miniature gold/silicon-on-insulator (SOI) coplanar waveguides (CPW) are rendered low, stable, and light insensitive when covered with a thin film (95 nm) fluoropolymer deposited by a trifluoromethane (CHF3) plasma. Microwave characterization (0–50 GHz) of the CPWs indicates that the fluoropolymer stabilizes a hydrogen-passivated silicon surface between the CPW tracks. The hydrophobic nature of the fluoropolymer acts as a humidity barrier, meaning that the underlying intertrack silicon surfaces do not re-oxidize over time—something that is known to increase losses. In addition, the fluoropolymer thin film also renders the CPW insertion losses insensitive to illumination with white light (2400 lx)—something potentially advantageous when using optical microscopy observations during microwave measurements. Capacitance–voltage (CV) measurements of gold/fluoropolymer/silicon metal–insulator-semiconductor (MIS) capacitors indicate that the fluoropolymer is an electret—storing positive charge. The experimental results suggest that the stored positive charge in the fluoropolymer electret and charge trapping influence surface-associated losses in CPW—MIS device modelling supports this. Finally, and on a practical note, the thin fluoropolymer film is easily pierced by commercial microwave probes and does not adhere to them—facilitating the repeatable and reproducible characterization of microwave electronic circuitry passivated by thin fluoropolymer.

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A Practical Crosstalk Reduction Technique Applied to High-Density Hard Disk Interconnecting Assembly Traces

Osaklang

Kruesubthaworn

Sivaratana³

et al. 2011

IEEE Trans. Magn.

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A low-loss V-groove coplanar waveguide on an SOI substrate

Cited by 3 publications

References 6 publications

Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Passivation of miniature microwave coplanar waveguides using a thin film fluoropolymer electret

A Practical Crosstalk Reduction Technique Applied to High-Density Hard Disk Interconnecting Assembly Traces

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