A low‐leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlO<sub>x</sub> gate insulator formed by metal‐organic chemical vapor deposition

Sazawa, Hiroyuki; Nishikawa, N.; Honda, Y.; Hata, Masahiko; Yagi, Shuichi; Shimizu, Mitsuaki; Okumura, Hajime; Sakurai, Takayasu; Akimoto, K.

doi:10.1002/pssc.200778652

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…The value of I g is comparable with recently published results. [27][28][29][30] The inset of Fig. 8 shows that the gate leakage of MOSHEMT for the forward voltage was clearly lower than that of HEMT.…”

Section: Resultsmentioning

confidence: 94%

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Basu

Singh

Sze

et al. 2010

J. Electrochem. Soc.

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The performance of n-GaN/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with a 20 nm thick Al2normalO3 gate oxide deposited using the low temperature liquid phase deposition technique is demonstrated. MOSHEMTs exhibit a 23% increase in saturation drain current density, 13% higher extrinsic transconductance, and a lower gate leakage current of 3 orders of magnitude in comparison with high electron mobility transistors. The stability and the interface quality of Al2normalO3/n-GaN by this alternative process are discussed. The sheet carrier concentration and Hall mobility are also estimated from the channel conductance under the gate, which is comparable with those measured by the van der Pauw method before the device processing.

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Section: Resultsmentioning

confidence: 94%

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Basu

Singh

Sze

et al. 2010

J. Electrochem. Soc.

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“…9 In the past decades, several methods were utilized to deposit Al 2 O 3 films to fabricate in various devices. [10][11][12][13][14][15] Among the deposition methods of Al 2 O 3 films, the atomic layer deposition (ALD) method is a widely used deposition method, which allows for deposition at relatively low-temperatures. ALD-deposited Al 2 O 3 films exhibits high breakdown field, high resistance, high conformance, and lowdefect density with good reproducibility and good thickness controllability.…”

mentioning

confidence: 99%

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al₂O₃ Gate Dielectric Layer

Jian

Lee

Chang

et al. 2021

ECS J. Solid State Sci. Technol.

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In this work, an atomic layer deposition system was used to deposit Al2O3 high-k dielectric film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). By using the Al2O3 gate dielectric layer, compared to planar channel structure, the direct current, high frequency, and flicker noise performances were improved in the GaN-based MOSHEMTs with fin-nanochannel array. For the GaN-based 80-nm-wide fin-nanochannel array MOSHEMTs, they exhibited superior performances of maximum extrinsic transconductance of 239 mS mm−1, threshold voltage of –0.4 V, unit gain cutoff frequency of 7.3 GHz, maximum oscillation frequency of 14.1 GHz, normalized noise power of 2.5 × 10−14 Hz−1, and Hooge’s coefficient of 1.4 × 10−6. The enhanced performances were attributed to the features of fin-nanochannel array of better gate control capability, enhanced pinch-off effect, and better heat dissipation driven by lateral heat flow within the space between fin-channels.

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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Gregušová¹,

Stoklas²,

Eickelkamp³

et al. 2009

Semicond. Sci. Technol.

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AlGaN/GaN/Si metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs) with SiN and Al 2 O 3 gate insulators are characterized by static and high-frequency measurements, and their performance is compared with nonpassivated and SiN-passivated heterostructure field-effect transistors (HFETs). The saturation drain current increased from ∼500 mA mm −1 for the HFETs to ∼770 mA mm −1 for the MISHFETs. The peak extrinsic transconductance of the MISHFETs (147 mS mm −1 for 8 nm SiN and 220 mS mm −1 for 4 nm Al 2 O 3 ) is higher than expected due to the increased gate-to-channel separation. Similarly, small signal microwave characterization yielded an increase in the current gain cut-off frequency (from 3.2 to 7.2 GHz) and the maximum frequency of oscillation (from 12.3 to 20.4 GHz) for the MISHFETs with 2 μm gate length compared to the HFET counterparts. Finally, the density of trap states, evaluated from the frequency-dependent conductance measurements, was ∼ =3 × 10 12 cm −2 eV −1 for the HFETs but only ∼ =1.8 × 10 12 cm −2 eV −1 for the MISHFETs. All of these demonstrate the capability of AlGaN/GaN MISHFETs of preparing high-performance and cost-effective devices for high-power microwave applications on a Si substrate.when compared with sapphire. Unfortunately, high-resistive SiC substrates are a costlier alternative to AlGaN/GaN devices. Devices on Si 8 , on the other hand, are the best solution considering their low cost, high crystalline perfection, good thermal conductivity and large-area availability of Si substrates.Recently, an excellent millimetre-wave performance (e.g. maximum frequency of oscillation of 110 GHz and noise figure of 1.3 dB at 20 GHz) has been reported on AlGaN/GaN-on-Si HFETs [1].

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A low‐leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlO_x gate insulator formed by metal‐organic chemical vapor deposition

Cited by 4 publications

References 13 publications

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al₂O₃ Gate Dielectric Layer

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

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A low‐leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlOx gate insulator formed by metal‐organic chemical vapor deposition

Cited by 4 publications

References 13 publications

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

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A low‐leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlO_x gate insulator formed by metal‐organic chemical vapor deposition

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al₂O₃ Gate Dielectric Layer