A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method

Pawar, Pravin S.; Tikke, R. S.; Patil, Vithoba L.; Mullani, Navaj B.; Waifalkar, P. P.; Khot, Kishorkumar V.; Teli, Aviraj M.; Sheikh, Arif D.; Dongale, Tukaram D.

doi:10.1016/j.mssp.2017.07.009

Cited by 39 publications

(12 citation statements)

References 34 publications

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“…On the other hand, the filamentary RS suffers from scaling issues [1,11]. The synergetic integration of homogeneous and filamentary RS may lead to highly scalable and efficient memory cells that would be useful for the CMOS-compatible RRAM and neuromorphic applications [15][16][17][18][19]. Considering the advantages of synergetic integration, many research groups come up with different solutions.…”

Section: Introductionmentioning

confidence: 99%

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

et al. 2018

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In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO 2 /SS thin film metal-insulator-metal device. The voltage-induced resistive switching leads to clockwise and counterclockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I-V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO 2 /SS metal-insulator-metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.

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Section: Introductionmentioning

confidence: 99%

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

et al. 2018

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“…In the present work, we achieved a 10 3 memory window at a 0.2-V read voltage. Such a higher memory window is required for resistive random access memory applications [29][30][31]. The endurance property could be used to probe the cycle-to-cycle resistive switching behavior of the memory device.…”

Section: Resultsmentioning

confidence: 99%

Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application

et al. 2018

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The memristive device is a fourth fundamental circuit element with inherent memory, nonlinearity, and passivity properties. Herein, we report on a cost-effective and rapidly produced ZnO thin film memristive device using the doctor blade method. The active layer of the developed device (ZnO) was composed of compact microrods. Furthermore, ZnO microrods were well spread horizontally and covered the entire surface of the fluorine-doped tin oxide substrate. X-ray diffraction (XRD) results confirmed that the synthesized ZnO was oriented along the c-axis and possessed a hexagonal crystal structure. The device showed bipolar resistive switching characteristics and required a very low resistive switching voltage (±0.8 V) for its operation. Two distinct and well-resolved resistance states with a remarkable 103 memory window were achieved at 0.2-V read voltage. The developed device switched successfully in consecutive 102 switching cycles and was stable over 102 seconds without any observable degradation in the resistive switching states. In addition to this, the charge–magnetic flux curve was observed to be a single-valued function at a higher magnitude of the flux and became double valued at a lower magnitude of the flux. The conduction mechanism of the ZnO thin film memristive device followed the space charge limited current, and resistive switching was due to the filamentary resistive switching effect.

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“…21 Among them, SILAR is a promising technique to synthesize cobalt phosphate nanomaterial due to its cost-effectiveness, lower chemical wastage, absence of precipitation, and scalability for commercial applications. 22 Within this work, we propose an inorganic low-cost resistive memory and synaptic device based on Co x (PO 4 ) 2 nanomaterial. As per the authors' knowledge, this is the first report of the cobalt phosphate or general phosphate nanomaterial-based resistive switching devices.…”

Section: Introductionmentioning

confidence: 99%

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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The rise of artificial intelligence and machine learning demands versatile electronic devices for memory and braininspired computing applications. The electronic materials are the backbones of these applications. Considering this, a functional Co x (PO 4 ) 2 nanomaterial was synthesized for resistive memory and neuromorphic computing applications. The synthesized nanomaterial was well characterized by using X-ray diffraction, Fourier transform infrared spectroscopy, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The fabricated Ag/Co x (PO 4 ) 2 /ITO device shows bipolar resistive switching and memristive properties. The SET and RESET voltages were analyzed by using different statistical measures, and their distribution was studied by using the Weibull technique. The results suggested that the SET voltages were more uniformly distributed than the RESET voltage. The switching nonlinearity was modeled and predicted by using Holt's exponential smoothingbased statistical time series analysis method. In the case of nonvolatile memory tests, the device shows good endurance (10 3 cycles) and memory retention (3 × 10 4 s) with excellent memory window (1.7 × 10 3 ) properties. Moreover, the device can mimic the potentiation−depression and spike-timing-dependent plasticity-based Hebbian learning rules, suggesting Co x (PO 4 ) 2 is a potential nanomaterial for the fabrication of artificial synapse. The detailed analysis of electrical results suggested that the space-charge-limited current-based charge transport was responsible for the device conduction, whereas the formation and rupture of conductive filament(s) were responsible for the resistive switching in the Ag/Co x (PO 4 ) 2 /ITO memristive device. The results of the present investigation suggested that the Co x (PO 4 ) 2 nanomaterial is a potential candidate for resistive memory and brain-inspired computing applications

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A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method

Cited by 39 publications

References 34 publications

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

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