A low-bias operational MPDA photodetector with high bandwidth-efficiency product and high saturation characteristics

Chuanxing, Jiang; Niu, Huijuan; Houzeng, Wang; Fan, Xinye; Fang, Wenjing; Zhang, Xia; Chen, Bai

doi:10.1080/09500340.2022.2071495

Journal of Modern Optics

2022

DOI: 10.1080/09500340.2022.2071495

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A low-bias operational MPDA photodetector with high bandwidth-efficiency product and high saturation characteristics

Jiang Chuanxing

Huijuan Niu

Wang Houzeng

et al.

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2024

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Design and optimization of MUTC photodiode performance under high-power operating conditions

Yang,

Duan,

Liu

et al. 2024

Appl. Opt.

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A high-bandwidth and high-power back-illuminated modified uni-traveling-carrier photodiode (MUTC-PD) with InGaAsP/InGaAs as the main material is designed. The influence of the material and doping concentration of the collection layer and transition layer on the electric field distribution were investigated to achieve fast carrier transport. Using a miniaturized mesa diameter reduces the device’s capacitance, leading to an increase in the RC-limited bandwidth of the photodetector (PD). The thicknesses of the depletion and transition regions of the MUTC-PD are further optimized. The performance characteristics of the MUTC-PD, including internal electric field, energy band diagram, frequency response, and RF output power, are carefully studied.

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Design and optimization of MUTC photodiode performance under high-power operating conditions

Yang,

Duan,

Liu

et al. 2024

Appl. Opt.

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A low-bias operational MPDA photodetector with high bandwidth-efficiency product and high saturation characteristics

Cited by 1 publication

References 12 publications

Design and optimization of MUTC photodiode performance under high-power operating conditions

Design and optimization of MUTC photodiode performance under high-power operating conditions

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