A look into the origin of shunt leakage current of Cu(In,Ga)Se2 solar cells via experimental and simulation methods

Liao, Yu Kuang; Kuo, Shou‐Yi; Hsieh, Ming Yang; Lai, Fang I.; Kao, Ming Hsuan; Cheng, Shun‐Jen; Chiou, Ding Wen; Hsieh, Ting-Yen; Kuo, Hao‐Chung

doi:10.1016/j.solmat.2013.05.031

Cited by 25 publications

(20 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The films show (112) oriented peaks with slightly random orientation and the grain average size is about 1 m. The three-stage process reduces the orientation of the nucleation but the grain sizes are smaller than those of the four-source elemental evaporation. Insertion of an In 2 S 3 layer improved the surface roughness of the film comparing with the same sample and AFM results that are reported in [5]. Probably, the intermix of the layers from CIGSe to In 2 S 3 or interdiffusion of Cu into In 2 S 3 (In 2 S 3 :Cu) and vice versa ceased due to this interface layer.…”

Section: Afm Analysis Dittrich Et Al Have Applied the Spv Technique Tosupporting

confidence: 82%

See 1 more Smart Citation

Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

Gorji

Reggiani

Sandrolini

2015

International Journal of Photoenergy

View full text Add to dashboard Cite

The band gap, grain size, and topography of a Cu(In,Ga)Se2(CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. From the steep increase in SPV signal the band gap of the CIGSe absorber, In2S3and ZnO layers are extracted and found to be 1.1, 1.3 and 2.6 eV, respectively. Already below the band gap of ZnO layer, a slight SPV response at 1.40 eV photon energies is observed indicating the presence of deep donor states. The root mean square (rms) of the surface roughness is found to be 37.8 nm from AFM surface topography maps. The grain sizes are almost uniform and smaller than 1 μm.

show abstract

Section: Afm Analysis Dittrich Et Al Have Applied the Spv Technique Tosupporting

confidence: 82%

“…These defects are detected and scanned by the AFM method to analyze their origin and type. AFM analysis of Liao et al on a similar device revealed that the film 2 International Journal of Photoenergy homogeneity, grain size, and surface roughness play a critical role on the characteristics of the finished device [5].…”

Section: Introductionmentioning

confidence: 98%

Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

Gorji

Reggiani

Sandrolini

2015

International Journal of Photoenergy

View full text Add to dashboard Cite

show abstract

“…The higher leakage current from the CBD ZnS device could be caused by the complex mixtures in the CBD ZnS layer, or its inhomogeneous growth on CIGS. Particularly, around the operating voltages of the two CIGS PV devices, the thermally decomposed ZnS NPs device exhibits lower series resistance, showing lower defects concentration [ 21 , 22 ]. The preferable electrical characteristic of ZnS NPs current from the CBD ZnS device could be caused by the complex mixtures in the CBD ZnS layer, or its inhomogeneous growth on CIGS.…”

Section: Resultsmentioning

confidence: 99%

“…The preferable electrical characteristic of ZnS NPs current from the CBD ZnS device could be caused by the complex mixtures in the CBD ZnS layer, or its inhomogeneous growth on CIGS. Particularly, around the operating voltages of the two CIGS PV devices, the thermally decomposed ZnS NPs device exhibits lower series resistance, showing lower defects concentration [ 21 , 22 ]. The preferable electrical characteristic of the ZnS NPs device suggests that the 2 nm single-crystal thermally decomposed ZnS NPs layer effectively protects the CIGS surface from plasma damage during AZO deposition [ 23 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

et al. 2017

Self Cite

View full text Add to dashboard Cite

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

show abstract

“…The sol-gel spin coating method has yet to reach commercial standards in terms of conductivity, and the process requires annealing at high temperatures. In the later production stage of CZTS(Se) solar cells, such as in high-temperature environments, the efficiency of CZTS(Se) solar cells drops [ 20 , 21 ]. Although the ALD and PLD processes can produce good TCL characteristics, they are still not applicable when considering the aspects of production cost, large areas, and the commercialization of mass production.…”

Section: Introductionmentioning

confidence: 99%

Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

et al. 2021

Self Cite

View full text Add to dashboard Cite

In this study, a radio-frequency magnetron sputter system was used to deposit Al2O3 doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.

show abstract

A look into the origin of shunt leakage current of Cu(In,Ga)Se2 solar cells via experimental and simulation methods

Cited by 25 publications

References 13 publications

Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

Contact Info

Product

Resources

About