A local vibrational mode investigation of <i>p</i>-type Si-doped GaAs

Ashwin, M. J.; Fahy, M.R.; Newman, R. C.; Wagner, J.; Robbie, D. A.; Sangster, M J L; Silier, I.; Bauser, E.; Braun, Wolfgang

doi:10.1063/1.357892

Cited by 16 publications

(8 citation statements)

References 43 publications

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“…This mode is a characteristic for the p-type doping. 21 For nanowires grown with a Si-flux larger than 5.6ϫ 10 9 Si/ ͑cm 2 s͒, an additional mode arises at 393 cm −1 that can be assigned to the formation of neutral Si Ga -Si As pairs. 12 The intensity of this peak increases as the silicon flux is increased.…”

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confidence: 99%

Compensation mechanism in silicon-doped gallium arsenide nanowires

Ketterer

Mikheev

Uccelli

et al. 2010

Applied Physics Letters

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P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4ϫ 10 18 cm −3 , silicon incorporates mainly in arsenic sites. For higher concentrations, we observe the formation of silicon pairs. This is related to the Coulomb interaction between charged defects during growth. An electrical deactivation of more than 85% of the silicon acceptors is deduced for nominal silicon concentration of 4 ϫ 10 19 cm −3 . This work is important to understand the limiting mechanisms of doping in compound semiconductor nanowires.

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confidence: 99%

Compensation mechanism in silicon-doped gallium arsenide nanowires

Ketterer

Mikheev

Uccelli

et al. 2010

Applied Physics Letters

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“…Although Si clearly acts as a substitutional acceptor, the presence and properties of acceptor complexes such as Si-X is debated. [53][54][55][56][57][58][59] Our data cannot provide insight at the atomic level, but there are clearly no acceptor sites in a p-type heterostructure's doping layer that act like the deeptrapping DX centers in n-type heterostructures. Regarding Si-X specifically, we can draw two conclusions: If Si-X exists in Al 0.33 Ga 0.67 As in (311)A heterostructures, then it must be a very shallow trap (more than 100 times shallower than DX) if present at high density, and only a deep-trap if it is present at such low density that it cannot 'freeze' the doping layer's charge configuration.…”

Section: Discussionmentioning

confidence: 92%

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

et al. 2012

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Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states.

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“…23,41,42 Optical methods have similar problems with resolution for the ternary systems, but Raman has had some success with identifying lattice site location of Si in binary III-V systems. [43][44][45][46] A. Al 1 , P 1 , and S 1 co-implants For short anneal times, there does appear to be some coimplant effect from the addition of Al þ co-implants to Si implanted InGaAs in that as the Al dose increases the active sheet number decreases as shown in Fig. 2(a).…”

Section: Discussionmentioning

confidence: 99%

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

Lind

Aldridge

Jones

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Elevated temperature, nonamorphizing implants of Si þ , and a second co-implant of either Al þ , P þ , or S þ at varying doses were performed into In 0.53 Ga 0.47 As to observe the effect that individual co-implant species had on the activation and diffusion of Si doping after postimplantation annealing. It was found that Al, P, and S co-implantation all resulted in a common activation limit of 1.7 Â 10 19 cm À3 for annealing treatments that resulted in Si profile motion. This is the same activation level observed for Si þ implants alone. The results of this work indicate that co-implantation of group V or VI species is an ineffective means for increasing donor activation of n-type dopants above 1.7 Â 10 19 cm À3 in InGaAs. The S þ co-implants did not show an additive effect in the total doping despite exhibiting significant activation when implanted alone. The observed n-type active carrier concentration limits appear to be the result of a crystalline thermodynamic limit rather than dopant specific limits. V

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A local vibrational mode investigation of p-type Si-doped GaAs

Cited by 16 publications

References 43 publications

Compensation mechanism in silicon-doped gallium arsenide nanowires

Compensation mechanism in silicon-doped gallium arsenide nanowires

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

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