A linear CMOS transconductance element of an adaptively biased source-coupled differential pair using a quadritail cell

Kimura, K.

doi:10.1007/bf00174247

Cited by 4 publications

(7 citation statements)

References 11 publications

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“…Tables 1 and 2 show typical values of these parameters for the transfer Large-signal analysis of CMOS elements 667 Figure 1. CMOS transconductance element built around an adaptively biased sourcecoupled diOE erential pair (Kimura 1996a). …”

Section: Basic Equationsmentioning

confidence: 99%

“…Assuming matched transistors operating in the saturation region, ignoring the body eOE ect and the channel-length modulation, and using equation (1), the transfer characteristic of the CMOS transconductanc e element built around an adaptively biased source-coupled diOE erential pair using a quadritail cell, shown in ® gure 1, can be expressed as (Kimura 1996a)…”

Section: Basic Equationsmentioning

confidence: 99%

“…With the rapid growth in the mobile telephone industry, there is a growing demand for low-power circuits. This explains the growing interest in designing CMOS-based low-power analogue functional elements sui table for mobile telephony. Recently, a linear CMOS transconductanc e element (Kimura 1996a) and a CMOS full-wave recti® er have been proposed (Kimura 1993). The linear transconductance element is an essential building block in many analogue signal-processing circuits and systems, for example active ® lters and four-quadran t multipliers.…”

Section: Introductionmentioning

confidence: 99%

“…Assuming matched transistors operating in the saturation region, ignoring the body eOE ect and the channel-length modulation, and using equation (1), expressions have been obtained for the transfer characteristics of the CMOS transconductanc e element and the CMOS full-wave recti® er (Kimura 1993(Kimura , 1996a.…”

Section: Introductionmentioning

confidence: 99%

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Large-signal analysis of CMOS analogue functional elements using Fourier-series approximations

Abuelma’atti¹

2001

International Journal of Electronics

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This paper discusses the large signal performance of CMOS analogue-functional elements. Fourier-series approximations are obtained for the transfer functions of the basic building blocks such as the linear CMOS transconductance element and the CMOS full-wave recti® er. Using these Fourier-series approximations, simple closed-form analytical expressions are obtained for the amplitudes of the harmonics at the output of a basic building block excited by a sinusoidal input signal. The analysis shows that, while the performance of the basic building blocks is near ideal at relatively small input amplitudes, performance degradation increases as the input amplitudes increase. On the other hand, since these expressions ignore the distortion mechanisms resulting from body eOE ect and channel-length modulation, they cannot reliably predict the performance at small input signal levels. It appears, therefore, that body-eOE ect and channel-length modulation must be taken into consideration for small-signal analysis.

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Section: Basic Equationsmentioning

confidence: 99%

Section: Basic Equationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Large-signal analysis of CMOS analogue functional elements using Fourier-series approximations

Abuelma’atti¹

2001

International Journal of Electronics

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“…Linear transconductance elements [1]- [14] are useful in building blocks in analog signal-processing systems and the literature on this topic is rich indeed. A cross-coupled quad cell is proposed by [1].…”

Section: Introductionmentioning

confidence: 99%

Design of Linear CMOS Transconductance Elements for Alpha-Power Law Based Mosfets and an Automatic Compensation Technique for Temperature

Gopalan¹

2014

ujeee

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A model on alpha-power law MOSFETs based source-coupled differential pair (SCDP) is discussed and a simple design procedure for realizing a linear CMOS SCDP transconductance element is proposed. The proposed or modified SCDP circuit using this procedure is an alternative to that of conventional SCDP and the circuit discussed has superior linearity for a wide range ±(0-300mv) of input differential voltage at a supply voltage of 1.2v. The modified SCDP also includes the circuitry needed to suppress the variation in the quiescent current with respect to input common-mode voltage noise. The SPICE results are used to verify theoretical predictions. The results show close agreement between the predicted model behavior and the simulated performance. The simulated result on Total Harmonic Distortion (THD) shows that the modified SCDP circuit is better than the conventional SCDP by about four times at input differential voltage amplitude of ±100mv. An example circuit, a second order continuous time gm-C band-pass filter is constructed using the fully differential modified SCDP and the fully differential conventional SCDP circuit and the result shows that the modified transconductor circuit is better in linearity (THD) than the conventional SCDP by about two times at the input differential voltage amplitude of ±100mv. An automatic digital compensation scheme for temperature is also presented and the temperature coefficient of output current is reduced by about eight times to 250ppm/deg.C after compensation for the maximum change in temperature of 150deg.C and at the input differential voltage of 100mv.

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A linear transconductance amplifier obtained by realizing a floating resistor

Kimura

1998

IEEE Trans. Circuits Syst. I

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A linear CMOS transconductance element of an adaptively biased source-coupled differential pair using a quadritail cell

Cited by 4 publications

References 11 publications

Large-signal analysis of CMOS analogue functional elements using Fourier-series approximations

Large-signal analysis of CMOS analogue functional elements using Fourier-series approximations

Design of Linear CMOS Transconductance Elements for Alpha-Power Law Based Mosfets and an Automatic Compensation Technique for Temperature

A linear transconductance amplifier obtained by realizing a floating resistor

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