A Light‐Controlled Resistive Switching Memory

Ungureanu, Mariana; Zazpe, Raúl; Golmar, F.; Stoliar, Pablo; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

doi:10.1002/adma.201200382

Cited by 144 publications

(118 citation statements)

References 12 publications

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“…Light assisted resistive logic states have been reported for Al 2 O 3 oxide sandwiched between Pd and SiO 2 /Si with controlled exposure to the top surface of alumina. 20 Other binary and ternary oxides have also shown an extra degree of freedom in resistive states under controlled illumination of light, which may be a signi-cant development in the eld of information and NVRAM technology. [21][22][23] On the other hand, devices directly integrated on Si is highly sensitive to the illumination of moderate light intensity which partially or permanently changes the band offset alignment and creates photon assisted trap levels near the different interface.…”

Section: Introductionmentioning

confidence: 99%

Light assisted irreversible resistive switching in ultra thin hafnium oxide

et al. 2015

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An ultra thin film ($5 nm) high-k Hafnium oxide dielectric, grown on a doped p-Si(100) substrate by the atomic layer deposition technique has been investigated for resistive and capacitive switching with and without illumination of light. As grown samples illustrate small non-switching leakage current under high applied electric fields and probe frequencies and trap charge assisted counter-clockwise capacitancevoltage behavior. A unique resistance switching was observed under illumination of 15-60 mW light. In the first cycle, the light assisted switching provide a 10 4 : 1 resistance ratio, which diminishes in the next cycle onward, which may be due to irreversible charge injection in the oxide layers. The band offset and band match-up energy diagram for the charge carriers responsible for resistive switching and charge trapping near the interface have been demonstrated under the application of a bias electric field and light.

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Section: Introductionmentioning

confidence: 99%

Light assisted irreversible resistive switching in ultra thin hafnium oxide

et al. 2015

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“…[7] The fundamental characteristic of such a memory device is repeatable resistance switching in an active material, triggered and modulated by different physical operating parameters, such as electrical stimuli, [8] magnetic field, [9] temperature, [10] or light. [11] However, learning and memory, which are crucial aspects of the information storage systems in human brain, are chemically mediated processes that are usually triggered and regulated by chemical molecules and ions. [12] To extend the functionality and adaptability of resistance-switching devices, memories with chemical responsiveness would be promising and attractive when constructing smart devices.…”

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confidence: 99%

Alcohol‐Mediated Resistance‐Switching Behavior in Metal–Organic Framework‐Based Electronic Devices

et al. 2016

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Metal-organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment-responsive devices and exhibits potential applications in wearable information storage systems.

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“…A crucial first step in this process is the generation of mobile oxygen species which, in the case of silicon oxide, is thought to involve a combination of applied field and electron injection. 9,10 There have been a handful of studies on light controllable resistance switching, [11][12][13][14] which conclude that optical illumination can improve switching properties or be an enabler for resistance switching. In these studies, the light illumination was used to control the resistance by modulating the trapped electrons in the binary strucutres 11 or by modulating the Schottky-like barriers.…”

mentioning

confidence: 99%

“…9,10 There have been a handful of studies on light controllable resistance switching, [11][12][13][14] which conclude that optical illumination can improve switching properties or be an enabler for resistance switching. In these studies, the light illumination was used to control the resistance by modulating the trapped electrons in the binary strucutres 11 or by modulating the Schottky-like barriers. 12 Other approaches include the use of the intrinsic photoconductivity of 1D metal oxide nanorods 13 and the use of photoferroelectric effects in multiferroic materials.…”

mentioning

confidence: 99%

Light-activated resistance switching in SiOx RRAM devices

Mehonić¹,

Gerard²,

Kenyon³

2017

Applied Physics Letters

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We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410–650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

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A Light‐Controlled Resistive Switching Memory

Cited by 144 publications

References 12 publications

Light assisted irreversible resistive switching in ultra thin hafnium oxide

Light assisted irreversible resistive switching in ultra thin hafnium oxide

Alcohol‐Mediated Resistance‐Switching Behavior in Metal–Organic Framework‐Based Electronic Devices

Light-activated resistance switching in SiOx RRAM devices

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