A Lifetime Prediction Method for IGBT Modules Considering the Self-Accelerating Effect of Bond Wire Damage

Qin, Fei; Bie, Xiaorui; An, Tong; Dai, Jing; Dai, Yanwei; Chen, Pei

doi:10.1109/jestpe.2020.2992311

Cited by 25 publications

(8 citation statements)

References 47 publications

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“…P con_T and P con_D are the conduction losses of the IGBT and FWD chips respectively, P sw is the switching loss of the IGBT, and P rec is the reverse recovery loss of the diode. For the specific calculation formula of the above power parameters, please refer to the literature [26] and the module data sheet.

\begin{equation}\left\{ \def\eqcellsep{&}\begin{array}{l} {P}_{\rm{T}}{\rm{ = }}{P}_{{\rm{con\_T}}}{\rm{ + }}P{}_{{\rm{sw}}}\\[12pt] {P}_{\rm{D}}{\rm{ = }}{P}_{{\rm{con\_D}}}{\rm{ + }}P{}_{{\rm{rec}}} \end{array} \right.\end{equation}

…”

Section: Lifetime Prediction Resultsmentioning

confidence: 99%

Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring

Zhang

et al. 2022

IET Power Electronics

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Insulated gate bipolar transistor (IGBT) modules are widely used as power switching devices. In actual working conditions, the failure of bonding wires is one of the most important failure modes. At present, the influence of bonding wire failure is not considered in the reliability evaluation of the device, resulting in a large error in the life prediction result. Therefore, this paper proposes a life evaluation method for IGBT modules that takes into account the failure of the bonding wire. The transient thermal impedance of 1200 V/50 A IGBT module under the failure conditions of different numbers of bonding wires is calculated by constructing a finite element simulation model of device electro‐thermal coupling. Both simulation and experimental results show that with the increase of the number of bonding wire failures, the transient thermal impedance curve of the device rises and the steady‐state thermal impedance increases. The Foster thermal network models of the devices are updated, and the number of power cycles of the device with bonding wire failure under DC and sinusoidal pulse width modulation (SPWM) conditions is calculated. When the number of bonding wire failures and fatigue accumulation have a linear relationship, the life will be reduced by 48.29% compared to the healthy state.

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\begin{equation}\left\{ \def\eqcellsep{&}\begin{array}{l} {P}_{\rm{T}}{\rm{ = }}{P}_{{\rm{con\_T}}}{\rm{ + }}P{}_{{\rm{sw}}}\\[12pt] {P}_{\rm{D}}{\rm{ = }}{P}_{{\rm{con\_D}}}{\rm{ + }}P{}_{{\rm{rec}}} \end{array} \right.\end{equation}

…”

Section: Lifetime Prediction Resultsmentioning

confidence: 99%

Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring

Zhang

et al. 2022

IET Power Electronics

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“…Physical life models include Coffin–Manson–Basquin model based on plastic deformation, Syed model based on creep, Morrow model based on energy, and Stolkarts model based on fatigue damage and their improved models. In [41], the failure life of the IGBT module is defined according to the deterioration of the collector‐emitter on‐resistance

R_{c e}

. In this paper, the self‐acceleration effect in the process of bonding wire damage is considered,

R_{c e}

is fed back to the power loss model, and the degradation delay stage and the degradation stage are proposed to describe the degradation process of the collector‐emitter on‐resistance R ce,on .…”

Section: Prediction Methodsmentioning

confidence: 99%

“…The prediction method is the key technique in the RUL analysis. Although some lifetime models are proposed for RUL prediction [32][33][34][35][36][37][38], the data-driven methods are obviously advanced in dealing with this kind of problem with huge historic data [39][40][41][42][43][44]. In recent years, the data-driven methods in condition estimation and prediction have developed very fast, thanks to the progress of AI and high performance programing chips [45][46][47][48][49][50][51].…”

Section: Introductionmentioning

confidence: 99%

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

et al. 2021

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The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measurement and estimation of the device operation conditions. Recently, emerging techniques have been developed, not only for the detection and estimation but also for the prognostics of IGBTs with the condition data. In this paper, a review is performed on the recent progress in the CM techniques for IGBTs. First, some emerging electrical and thermal measurements are reviewed. Based on the sensed data, the health indicator estimation techniques are summarised. Moreover, for the emerging prognostics and health management applications, some remaining using lifetime (RUL) prediction methods are reviewed. Finally, the research gaps and directions are discussed for the CM in IGBT applications.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…If the strain exceeds the elastic region of the stress deformation characteristic, then cracks, voids, and material dislocations are produced in the die attach because of the great difference in the linear CTE of the materials (CTE for copper is 16-18, silicon is 2.6-3.3, and lead-free solder is 20-22.9 ppm/ °C). From the existing literature study, R DS(on) is the most significant aging factor in MOSFETs [4,11], [25][26][27][28][29][30][31][32][33]. Temperature elevation accelerates the degradation processes of semiconductor devices, and the Arrhenius equation can describe the influence of temperature.…”

Section: Parasitic Parameters As Quality Precursors 221 Mosfet Qualit...mentioning

confidence: 99%

Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters

Yun

Yang

et al. 2022

Front. Phys.

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With the emerging wide bandgap (WBG) semiconductor development, the increasing power density and efficiency of power electronic converters may cause more switching oscillation, electromagnetic interference noise, and additional power loss, further increasing the probability of device failure. Therefore, determining and quantifying the failure of a metal-oxide-semiconductor-field-effect transistor (MOSFET), which assembled using WBG semiconductor in some applications, is crucial to improving the reliability of a power converter. This study proposes a novel failure quantitative assessment approach based on MOSFET parasitic parameters. According to the two-port network theory, MOSFET is equivalent to some second-order RLC circuits composed of independent inductances, capacitances, and resistances in series. Then, the frequency-domain impedance associated with the physical failure of MOSFET is identified through frequency domain reflectometry. Accelerated aging and bond wires cut-off experiments are employed to obtain various quality states of the MOSFET device. Result shows that the MOSFET quality level and its number of bond wire lift-offs can be quantified effectively. Drain-to-source on-resistance (RDS(on)) that normally represents the MOSFET quality shows a positive linear function relationship on drain-to-source parasitic resistance (RD + RS) during the quality degradation proceeding. This finding matches with the correlation established between RDS (on) and RD + RS in theory. Meanwhile, source parasitic inductance (LS) increases with the severity of bond wires faults, and even the slight fault shows a high sensitivity. The proposed approach would be an effective quality screening technology for power semiconductor devices without power on treatment, which can effectively avoid the impact of junction temperature and test conditions (current and voltage) on test results, and does not need to design additional test circuits. The test frequency range we used in this approach was 10–300 MHz, which to some extent is suitable for providing an on-line quality monitoring technology for high-frequency WBG power devices manufacturing.

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A Lifetime Prediction Method for IGBT Modules Considering the Self-Accelerating Effect of Bond Wire Damage

Cited by 25 publications

References 47 publications

Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring

Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters

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